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BAT54S_QF40 PDF预览

BAT54S_QF40

更新时间: 2024-10-31 23:15:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 肖特基二极管
页数 文件大小 规格书
3页 112K
描述
Schottky Barrier Diode

BAT54S_QF40 数据手册

 浏览型号BAT54S_QF40的Datasheet PDF文件第2页浏览型号BAT54S_QF40的Datasheet PDF文件第3页 
February 2005  
BAT54/A/C/S  
Schottky Diodes  
Connection Diagram  
BAT54  
BAT54A  
3
3
3
3
L4P  
2
1
1
2NC  
2
1
2
BAT54C  
BAT54S  
MARKING  
= L4P BAT54A = L42  
= L43 BAT54S = L44  
3
3
1
BAT54  
BAT54C  
SOT-23  
1
2
1
2
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
RRM  
F(AV)  
FSM  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
30  
Unit  
V
V
I
I
200  
mA  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
600  
T
T
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
D
Parameter  
Value  
290  
Unit  
mW  
P
Power Dissipation  
R
Thermal Resistance, Junction to Ambient  
430  
°C/W  
θJA  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
R
Parameter  
Conditions  
Min.  
30  
Max.  
Units  
V
V
Breakdown Voltage  
I
= 10µA  
V
R
Forward Voltage  
I
I
I
I
I
= 0.1mA  
= 1mA  
= 10mA  
= 30mA  
= 100mA  
240  
320  
400  
500  
0.8  
mV  
mV  
mV  
mV  
V
F
F
F
F
F
F
I
Reverse Leakage  
V
V
= 25V  
2
µA  
pF  
ns  
R
R
R
C
Total Capacitance  
= 1V, f = 1.0MHz  
10  
5.0  
T
t
Reverse Recovery Time  
I = I = 10mA, I = 1.0mA,  
F R RR  
R = 100Ω  
rr  
L
©2005 Fairchild Semiconductor Corporation  
BAT54/A/C/S Rev. E1  
1
www.fairchildsemi.com  

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