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BAT54S-13 PDF预览

BAT54S-13

更新时间: 2024-11-01 14:47:59
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
3页 81K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-3

BAT54S-13 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.05Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAT54S-13 数据手册

 浏览型号BAT54S-13的Datasheet PDF文件第2页浏览型号BAT54S-13的Datasheet PDF文件第3页 
SPICE MODELS: BAT54 BAT54A BAT54C BAT54S  
BAT54 /A /C /S  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
SOT-23  
·
·
·
·
Low Turn-on Voltage  
Fast Switching  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
PN Junction Guard Ring for Transient and ESD Protection  
Available in Lead Free/RoHS Compliant Version (Note 3)  
B
B
C
C
TOP VIEW  
D
Mechanical Data  
D
G
E
E
·
·
Case: SOT-23.  
H
G
H
Case Material. Molded Plastic. UL Flammability Classification  
Rating 94V-0  
K
M
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
J
L
Terminals: Solderable per MIL-STD-202, Method 208  
K
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please See Ordering  
Information, Note 5, on Page 3  
L
M
a
·
·
·
Polarity: See Diagrams Below  
All Dimensions in mm  
Marking Code: See Diagrams Below & Page 3  
Ordering Information: See Page 3  
BAT54S Marking: KL4  
BAT54 Marking: KL1  
BAT54A Marking: KL2  
BAT54C Marking: KL3  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IF  
IFRM  
IFSM  
200  
300  
mA  
mA  
Forward Continuous Current (Note 2)  
Repetitive Peak Forward Current  
Forward Surge Current  
600  
mA  
@ t < 1.0s  
Pd  
Power Dissipation (Note 2)  
200  
mW  
°C/W  
°C  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
500  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 1)  
I
RS = 100mA  
¾
¾
V
IF = 0.1mA  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
240  
320  
400  
mV  
Forward Voltage (Note 1)  
¾
¾
VF  
500  
1000  
VR = 25V  
IR  
Reverse Leakage Current (Note 1)  
Total Capacitance  
¾
¾
¾
2.0  
10  
mA  
VR = 1.0V, f = 1.0MHz  
CT  
¾
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes: 1. Short duration test pulse used to minimize self-heating effect.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
DS11005 Rev. 16 - 2  
1 of 3  
BAT54 /A /C /S  
www.diodes.com  
ã Diodes Incorporated  

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