Datasheet > BAT54SD

BAT54SD

更新时间： 2025-08-08 01:00:15

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	155K
描述
200mW Surface Mount Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAT54SD 数据手册

BAT54T/AD/CD/SD/BR

Taiwan Semiconductor

Small Signal Product

200mW Surface Mount Schottky Barrier Diode

FEATURES

- Fast switching speed

- Low forward voltage drop

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

SOT-363

MECHANICAL DATA

- Case: SOT-363 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Polarity: Indicated by cathode band

- Weight: 0.006 gram (approximately)

- Marking Code: KLA, KL6, KL7, KL8, KLB

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

Peak Repetitive Peak Reverse Voltage

VALUE

SYMBOL

V_RRM

V_RWM

V_R

UNIT

Working Peak Reverse Voltage

DC Reverse Voltage

Forward Continuous Current

Repetitive Peak Forward Current

Forward Surge Current @ t < 1.0 s

Power Dissipation

I_F

200

300

I_FRM

I_FSM

600

P_D

200

°C/W

^oC

Thermal Resistance, Junction to Ambient Air

Operating and Storage temperature

R_θJA

625

T_j, T_STG

-55 to 125

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=100µA

I_F=1mA

Reverse Breakdown Voltage

V_(BR)

0.32

0.40

0.50

1.00

2.0

I_F=10mA

V_F

Forward Voltage

I_F=30mA

I_F=100mA

V_R=25V

Reverse Current

Total Capacitance

I_R

C_T

t_rr

µA

V_R=1V, f=1.0MHz

I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

Reverse Recovery Time

5.0

Version: E14

Document Number: DS_S1404008

12 3 4 5

中文翻译

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