Datasheet > BAT54GW

BAT54GW

更新时间： 2024-11-12 11:14:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	672K
描述
30 V, 200 mA Schottky barrier diodeProduction

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BAT54GW 数据手册

BAT54GW

30 V, 200 mA Schottky barrier diodes

24 November 2016

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an

SOD123 small Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low forward voltage: V_F≤ 400 mV

•

Low leakage current: I_R≤ 2 µA

Reverse voltage V_R≤ 30 V

Low capacitance

Small SMD plastic package

AEC-Q101 qualified

3. Applications

•

Ultra high-speed switching

Line termination

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

200

400

Unit

I_F

forward current

forward voltage

T_j= 25 °C

V_F

I_F= 10 mA; t_p≤ 300 µs; δ ≤ 0.02 ;

T_j= 25 °C

[1]

I_R

reverse current

reverse voltage

V_R= 25 V; pulsed; T_j= 25 °C

T_j= 25 °C

µA

V_R

[1] Very short test pulse to prevent junction self-heating.

12 3 4 5 6 7...12

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