Datasheet > BAT54H_10

BAT54H_10

更新时间： 2024-11-11 08:48:47

品牌	Logo	应用领域
SECOS		肖特基二极管
页数	文件大小	规格书
2页	223K
描述
Surface Mount Schottky Barrier Diode

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BAT54H_10 数据手册

BAT54H

0.2A, 30V Silicon Hot-Carrier Detector

Surface Mount Schottky Barrier Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOD-323

ꢀ

Low Turn-on Voltage

Extremely Fast Switching Speed

PN Junction Guard Ring for Transient and ESD Protection

Cathode Band

MECHANICAL DATA

ꢀ

Case: SOD-323, Molded Plastic

Low Forward Voltage : 0.35 V@ I_F=10mA

ꢀ

MARKING

Date Code

JVꢁ

Millimeter

Min. Max.

1.05 REF.

0.20 REF.

Millimeter

REF.

Min.

Max.

0.180

1.45

0.080

1.15

1.60

2.30

0.80

1.00

1.80

0.25

0.40

2.70

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOD-323

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_J= 125°C unless otherwise specified)

Unit

Parameter

Symbol

Ratings

Reverse Voltage

V_R

I_F

Forward Current

200

Peak Repetitive Forward Current

Rated V_R, Square Wave, 20KHz

I_FSM(1)

I_FSM(2)

400

600

Non–Repetitive Peak Forward Current

(t ≦ 1.0 s)

Repetitive Peak Forward Current

Thermal Resistance, Junction to Ambient

Power Dissipation

I_FRM

R_θJA

300

635

°C/W

°C

P_D

200

Junction & Storage Temperature

T_J, T_STG

-55~125, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameters

Reverse Breakdown Voltage

Total Capacitance

Symbol

V_(BR)

C_T

Min.

Typ.

Max.

Unit

Test Conditions

I_R= 10µA

7.6

0.5

µA

V_R= 1.0V, f= 1.0MHz

V_R= 25

Reverse Leakage

I_R

2.0

V_{F (1)}

V_{F (2)}

V_{F (3)}

V_{F (4)}

V_{F (5)}

0.22

0.29

0.35

0.41

0.52

0.24

0.32

0.40

0.50

1.00

I_F= 0.1mA

I_F= 1mA

Forward Voltage

I_F= 10mA

I_F= 30mA

I_F= 100mA

I_F=I_R= 10mA,

I_R(REC)= 1.0mA

Reverse Recovery Time ^{*Figure 1}

Trr

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Dec-2010 Rev. C

Page 1 of 2

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