Datasheet > BAT54CD-G

BAT54CD-G

更新时间： 2024-11-01 12:56:07

品牌	Logo	应用领域
TSC		肖特基二极管
页数	文件大小	规格书
4页	393K
描述
200mW Surface Mount Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAT54CD-G 数据手册

BAT54T/AD/CD/SD/BR - G

200mW Surface Mount Schottky Barrier Diode

Small Signal Product

SOT-363

Features

◇ Fast switching speed

◇ Low forward voltage drop

◇ Moisture sensitivity level 1

◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate

◇ Pb free version and RoHS compliant

◇ Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Mechanical Data

◇ Case :SOT-363 small outline plastic package

◇ Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, method 208 guaranteed

◇ High temperature soldering guaranteed: 260°C/10s

◇ Weight : 0.006 gram (approximately)

Ordering Information (example)

Packing code

(Green)

Part No.

Package

SOT-363

Packing

Manufacture code

RFG

BAT54T-G

3K / 7" Reel

Note : Detail please see "Ordering Information(detail, example)" below.

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Value

Symbol

Units

Parameter

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

V_RRM

V_RWM

V_R

Forward Continuous Current

I_F

200

300

Repetitive Peak Forward Current

Forward Surge Current @ t < 1.0 s

Power Dissipation

I_FRM

I_FSM

P_d

600

200

°C/W

^oC

Thermal resistance, junction to ambient air

Operating and Storage temperature

R_θJA

T_j, T_STG

625

-65 to 150

Electrical Characteristics

Min

Max

Symbol

Units

Parameter

I_R=100μA

I_F=0.1mA

I_F=1mA

V_(BR)

Reverse Breakdown Voltage

0.24

0.32

0.40

0.50

I_F=10mA

I_F=30mA

I_F=100mA

V_R=25V

V_F

Forward Voltage

I_R

C_T

t_rr

2.0

Reverse current

μA

V_R=1V, f=1.0MHz

Total Capacitance

I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

5.0

Reverse Recovery Time

Version : A13

12 3 4

中文翻译

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