BAT54-G

更新时间： 2024-11-11 04:34:19

品牌	Logo	应用领域
上华 - COMCHIP		肖特基二极管
页数	文件大小	规格书
2页	64K
描述
Surface Mount Schottky Diode

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中文翻译

获取价格

数据手册

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BAT54-G 数据手册

SSuurrffaaccee Mount SScchhoottttkkyy DDiiooddee

COMCHIP

www.comchip.com.tw

Voltage: 30 Volts

Current: 200mA

Series -G

BAT54

Features

Low Turn-onVoltage

Fast Switching

PN Junction GuardRing for Transient and

ESD Protection

SOT-23

.119 (3.0)

.110 (2.8)

Mechanical data

Case: SOT-23, Molded Plastic

Terminals:Solderable per MIL-STD-202, Method 208

Polarity: See DiagramsBelow

Weight: 0.008 grams (approx.)

Mounting Position:Any

.020 (0.5)

Top View

BAT54A-G

BAT54-G

CATHODE

.037(0.95)

CATHODE

ANODE

CATHODE

ANODE

CATHODE

.103 (2.6)

.086 (2.2)

.020 (0.5) .020 (0.5)

ANODE

CATHODE

ANODE

CATHODE

Dimensions in inches (millimeters)

BAT54C-G

BAT54S-G

Maximum Ratings (T_A= 125°C unless otherwise noted)

Rating

Symbol

Value

Units

Reverse Voltage

Forward Power Dissipation @ TA = 25°C

Derate above 25°C

V_R

Volts

225

P_F

1.8

200 Max

125 Max

mW/°C

I_F

T_J

Forward Current (DC)

Junction Temperature

°C

T_stg

-55 to +150

Storage Temperature Range

Electrical Characterics (T_A= 25°C unless otherwise noted) (EACH DIODE)

Parameter

Symbol

Min

Typ

—

Max

—

Unit

Volts

V_(BR)R

Reverse Breakdown Voltage (IR = 10 mA)

C_T

I_R

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

—

7.60

10.0

mAdc

Reverse Leakage (VR = 25 V)

Forward Voltage (IF = 0.1 mAdc)

(IF = 30 mAdc)

(IF = 100 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1

Forward Voltage (IF = 1.0 mAdc)

(IF = 10 mAdc)

Forward Current (DC)

Repetitive Peak Forward Current

0.50

0.22

0.41

0.52

2.0

0.24

0.5

V_F

—

Vdc

1.0

t_rr

—

5.0

0.29

0.35

—

0.32

0.40

200

300

600

V_F

Vdc

I_F

I_FRM

I_FSM

—

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

“-G” suffix designates RoHS compliant Version

Page 1

中文翻译

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