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BAT48RL PDF预览

BAT48RL

更新时间: 2024-11-18 13:02:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管
页数 文件大小 规格书
5页 97K
描述
0.35A, 40V, SILICON, SIGNAL DIODE, DO-35, ROHS COMPLIANT, PLASTIC PACKAGE-2

BAT48RL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.36外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.25 V
JEDEC-95代码:DO-35JESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:7.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BAT48RL 数据手册

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BAT 47  
BAT 48  
SMALL SIGNAL SCHOTTKY DIODE  
DESCRIPTION  
General purpose, metal to silicon diodes featuring  
very low turn-on voltage and fast switching.  
These devices have integrated protection against  
excessivevoltagesuchas electrostaticdischarges.  
DO 35  
(Glass)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF  
Parameter  
Repetitive Peak Reverse Voltage  
BAT47  
20  
BAT48  
Unit  
V
40  
Forward Continuous Current*  
350  
1
mA  
A
T = 25 C  
°
a
IFRM  
Repetitive Peak Fordward Current*  
tp 1s  
δ 0.5  
IFSM  
Surge non Repetitive Forward Current*  
tp = 10ms  
tp = 1s  
7.5  
1.5  
330  
A
Ptot  
Power Dissipation*  
T = 25 C  
mW  
°
a
Tstg  
Tj  
Storage and Junction Temperature Range  
- 65 to + 150  
- 65 to + 125  
C
°
°C  
TL  
Maximum Temperature for Soldering during 10s at 4mm from  
Case  
230  
°C  
THERMAL RESISTANCE  
Symbol  
Test Conditions  
Value  
Unit  
Rth(j-l)  
Junction-ambient*  
300  
°
C/W  
* On infinite heatsink with 4mm lead length  
August 1999 Ed: 1A  
1/5  

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