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BAT51ERM PDF预览

BAT51ERM

更新时间: 2024-01-25 14:55:02
品牌 Logo 应用领域
ASI 二极管
页数 文件大小 规格书
1页 77K
描述
Mixer Diode, KU Band, Silicon, DO-37, DO-37, 2 PIN

BAT51ERM 技术参数

生命周期:Active零件包装代码:DO-37
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.7
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:KU BAND
JEDEC-95代码:DO-37JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BAT51ERM 数据手册

  
BAT51E  
MICROWAVE MIXER DIODE  
PACKAGE STYLE DO- 37  
DESCRIPTION:  
The ASI BAT51E is a Silicon  
Microwave Mixer Diode Designed for  
low noise performance in Applications  
Operating from 12 to 18 GHz.  
FEATURES:  
Low Noise Fugure  
Available in reverse polarity by  
adding suffix R  
Available in forward matched pairs  
by adding suffix MR  
Available in reverse matched pairs  
by adding suffix RM  
MAXIMUM RATINGS  
-55 °C to +100 °C  
-55 °C to +100 °C  
TAMB  
TSTG  
NONE  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
IR  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIM  
UNITS  
µA  
VR = 0.5 V  
VF = 0.5 V  
NIF = 100  
2.0  
IF  
2.0  
7.0  
5.2  
mA  
dB  
dB  
NO  
LC  
ZIF  
f = 13.5 GHz  
250  
350  
450  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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