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BAS70-04LT1/D PDF预览

BAS70-04LT1/D

更新时间: 2024-11-04 23:34:31
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
4页 78K
描述
Common Anode Schottky Barrier Diode

BAS70-04LT1/D 数据手册

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Order this document  
by BAS70–04LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
These Schottky barrier diodes are designed for high speed switching applications,  
circuit protection, and voltage clamping. Extremely low forward voltage reduces  
conduction loss. Miniature surface mount package is excellent for hand held and  
portable applications where space is limited.  
70 VOLTS  
SCHOTTKY BARRIER DIODES  
Extremely Fast Switching Speed  
Low Forward Voltage — 0.75 Volts (Typ) @ I = 10 mAdc  
F
ANODE  
1
CATHODE  
2
3
3
CATHODE/ANODE  
1
2
CASE 31808, STYLE 11  
SOT23 (TO236AB)  
MAXIMUM RATINGS (T = 150°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
R
70  
Volts  
Forward Power Dissipation  
P
F
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Operating Junction and Storage Temperature Range  
T
T
55 to +150  
°C  
J, stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
70  
Max  
Unit  
Volts  
pF  
Reverse Breakdown Voltage (I = 10 µA)  
V
(BR)R  
R
Total Capacitance (V = 0 V, f = 1.0 MHz)  
C
2.0  
R
T
Reverse Leakage (V = 50 V)  
(V = 70 V)  
R
I
R
0.1  
10  
µAdc  
R
Forward Voltage (I = 1.0 mAdc)  
V
F
V
F
V
F
410  
750  
1.0  
mVdc  
mVdc  
Vdc  
F
Forward Voltage (I = 10 mAdc)  
F
Forward Voltage (I = 15 mAdc)  
F
Preferred devices are Motorola recommended choices for future use and best overall value.  
Thermal Clad is a registered trademark of the Bergquist Company.  
REV 2  
Motorola, Inc. 1998  

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