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BAS70-04LT1G PDF预览

BAS70-04LT1G

更新时间: 2024-11-04 23:15:43
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管PC
页数 文件大小 规格书
4页 47K
描述
Dual Series Schottky Barrier Diode

BAS70-04LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.85Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224431
Samacsys Pin Count:3Samacsys Part Category:Diode
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08
Samacsys Released Date:2015-07-23 09:25:11Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-50 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:70 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAS70-04LT1G 数据手册

 浏览型号BAS70-04LT1G的Datasheet PDF文件第2页浏览型号BAS70-04LT1G的Datasheet PDF文件第3页浏览型号BAS70-04LT1G的Datasheet PDF文件第4页 
BAS70−04LT1  
Preferred Device  
Dual Series  
Schottky Barrier Diode  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features  
70 VOLTS  
SCHOTTKY BARRIER DIODE  
Extremely Fast Switching Speed  
Low Forward Voltage  
Pb−Free Package is Available  
ANODE  
1
CATHODE  
2
3
CATHODE/ANODE  
3
MAXIMUM RATINGS (T = 150°C unless otherwise noted)  
J
1
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
2
V
R
70  
Volts  
SOT−23  
(TO−236AB)  
CASE 318  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Forward Power Dissipation  
P
F
@ T = 25°C  
Derate above 25°C  
225  
1.8  
mW  
mW/°C  
A
MARKING DIAGRAM  
Operating Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
CG M  
CG = Specific Device Code  
= Date Code  
M
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAS70−04LT1  
SOT−23  
3000 / Tape & Reel  
3000 / Tape & Reel  
BAS70−04LT1G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 6  
BAS70−04LT1/D  

BAS70-04LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BAS70-04LT1 ONSEMI

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