BAS70-04T

更新时间： 2024-11-05 08:48:27

品牌	Logo	应用领域
美微科 - MCC		肖特基二极管
页数	文件大小	规格书
3页	584K
描述
150mWatt, 70Volt Schottky Barrier Diode

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中文翻译

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数据手册

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BAS70-04T 数据手册

M C C

BAS70T

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAS70-04T

BAS70-05T

Micro Commercial Components

BAS70-06T

Features

•

Ultra-Small Surface Mount Package

Low turn on Voltage

150mWatt, 70Volt

Fast Switching

Schottky Barrier Diode

PN Junction Guard Ring for Transient andESD Protection

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

MCC

Device

Configuration

Figure 1

Part Number Marking

Type

Single

Dual

BAS70T

SOT-523

BAS70-04T

BAS70-05T

BAS70-06T

Figure 2

Dual

Figure 3

Figure 4

Dual

Maximum Ratings

DC Blocking Voltage

V_R

I_F

I_FSM

P_D

T_stg

T_j

70V

Forward Continuous Current

70mA

100mA

150mW

Non-Repetitive Peak Forward Current t<1s

Total Power Dissipation @ T_A= 25°C

Storage Temperature Range

-55°C to 150°C

Junction Temperature

DIMENSIONS

INCHES

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIM

MIN

.059

.030

.057

MAX

.067

.033

.069

MIN

1.50

0.75

1.45

MAX

1.70

0.85

1.75

NOTE

Ratings

Symbol

Max.

Notes

410mV

I_F=1mA

Forward Voltage

V_F

1000mV I_F=15mA

.020 Nominal

0.50Nominal

0.90

Reverse Current

Reverse Breakdown

Voltage

I_R

V_(BR)

100nA

>70V

V_R= 50V

I_R=10uA

.035

.043

.004

.031

.008

.014

1.10

.000

.028

.004

.010

.000

.70

.100

.25

.100

0.80

.200

.35

Total Capacitance

2pF

Measured at

1.0MHz, V_R=0V

I_F=I_R= 10mA ;

Irr=0.1*I_R

C_T

t_rr

Reverse Recovery

Time

5nS

R_L= 100Ω

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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