Datasheet > BAS40-05T-13-F

BAS40-05T-13-F

更新时间： 2024-11-10 03:53:43

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	74K
描述
Rectifier Diode,

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中文翻译

获取价格

数据手册

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BAS40-05T-13-F 数据手册

SPICE MODELS: BAS40T BAS40-04T BAS40-05T BAS40-06T

BAS40T/-04T/-05T/-06T

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Lead-free

Features

Low Forward Voltage Drop

Fast Switching

SOT-523

Ultra-Small Surface Mount Package

PN Junction Guard Ring for Transient and ESD Protection

Lead Free/RoHS Compliant (Note 3)

Dim Min Max Typ

0.15 0.30 0.22

0.75 0.85 0.80

1.45 1.75 1.60

Mechanical Data

0.50

0.90 1.10 1.00

1.50 1.70 1.60

0.00 0.10 0.05

0.60 0.80 0.75

0.10 0.30 0.22

0.10 0.20 0.12

0.45 0.65 0.50

Case: SOT-523

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Polarity: See Diagrams Below

0°

8°

Marking: See Diagrams Below & Page 2

Weight: 0.002 grams (approximate)

Ordering Information, see Page 2

All Dimensions in mm

TOP VIEW

BAS40-05T Marking: 45

BAS40-06T Marking: 46

BAS40T Marking: 43

BAS40-04T Marking: 44

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

°C/W

°C

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t = 1.0s

Power Dissipation (Note 1)

200

600

150

833

I_FSM

P_d

R_qJA

T_j

Thermal Resistance Junction to Ambient (Note 1)

Operating Temperature Range

-55 to +125

-65 to +150

T_STG

Storage Temperature Range

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_R= 10mA

I_F= 1.0mA, t_p< 300ms

I_F= 40mA, t_p< 300ms

380

1000

V_F

Forward Voltage

V_R= 30V

I_R

Leakage Current (Note 2)

Total Capacitance

200

5.0

V_R= 0, f = 1.0MHz

C_T

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100W

t_rr

Reverse Recovery Time

5.0

Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. No purposefully added lead.

DS30265 Rev. 10 - 2

1 of 3

BAS40T/-04T/-05T/-06T

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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与BAS40-05T-13-F相关器件

型号	品牌	获取价格	描述	数据表
BAS40-05T-7	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-05T-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-05-TP	MCC	获取价格	Surface Mount Schottky Barrier Diode 200 mWatt
BAS40-05-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon,
BAS40-05T-TP	MCC	获取价格	Rectifier Diode, 2 Element, 0.2A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
BAS40-05T-TP-HF	MCC	获取价格	Rectifier Diode,
BAS40-05V	NXP	获取价格	General-purpose Schottky diodes
BAS40-05V	WTE	获取价格	General-purpose Schottky diodes
BAS40-05V	NEXPERIA	获取价格	General-purpose quadruple Schottky diodeProduction
BAS40-05V	RECTRON	获取价格	Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse C

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