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BAS40-05V PDF预览

BAS40-05V

更新时间: 2024-11-07 18:04:51
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 483K
描述
Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse Current Ir : 0.2 uA;Recovery Time : 5 nS;Package / Case : SOT-23;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101

BAS40-05V 数据手册

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BAS40V  
BAS40-04V  
BAS40-05V  
BAS40-06V  
SCHOTTKY BARRIER DIODE  
ꢀ ꢀ  
SOT-23  
FEATURESꢀ  
Low Forward Voltage  
Fast Switching  
P/N suffix V means AEC-Q101 ualified  
P/N suffix V means Halogen-free  
q
, e.g:BAS40V  
BAS40 MARKING: 43•  
MARKING:  
BAS40-06 MARKING: 46  
BAS40-05 MARKING˖˖45  
BAS40-04 MARKING˖44  
BAS40  
BAS40-06  
BAS40-05  
BAS40-04  
Solid dot = Green molding compound device,if none,  
the normal device.  
Maximum Ratings @Ta=25℃  
Parameter  
Limit  
Unit  
Symbol  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
40  
V
200  
200  
Forward continuous current  
IFM  
mA  
Power dissipation  
PD  
RθJA  
TJ  
mW  
/W  
Thermal resistance junction to ambient  
Junction temperature  
Storage temperature range  
500  
-55~+150  
-55~+150  
TSTG  
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)  
ꢀ ꢀ ꢀ ꢀꢀꢀ ꢀ Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
Min  
40  
Max  
200  
Unit  
V
Reverse breakdown voltage  
Reverse voltage leakage current  
IR=10μA  
VR=30V  
nA  
IF=1mA  
380  
Forward voltage  
VF  
CD  
mV  
pF  
ns  
IF=40mA  
1000  
VR=0,f=1MHz  
5
Diode capacitance  
Irr=1mA, IR=IF=10mA  
RL=100Ω  
t r r  
5
Reverse recovery time  
2020-11/02  
REV:O  

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