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BAS40-05-V-GS18 PDF预览

BAS40-05-V-GS18

更新时间: 2024-11-06 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 信号二极管小信号肖特基二极管光电二极管
页数 文件大小 规格书
5页 156K
描述
Small Signal Schottky Diodes, Single & Dual

BAS40-05-V-GS18 技术参数

是否无铅: 不含铅生命周期:Obsolete
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.4
Is Samacsys:N配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.38 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS40-05-V-GS18 数据手册

 浏览型号BAS40-05-V-GS18的Datasheet PDF文件第2页浏览型号BAS40-05-V-GS18的Datasheet PDF文件第3页浏览型号BAS40-05-V-GS18的Datasheet PDF文件第4页浏览型号BAS40-05-V-GS18的Datasheet PDF文件第5页 
BAS40-00-V to BAS40-06-V  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single & Dual  
Features  
• These diodes feature very low turn-on  
voltage and fast switching  
• These devices are protected by a PN  
junction guard ring against excessive volt-  
age, such as electrostatic discharges  
e3  
BAS40-00-V  
BAS40-04-V  
3
3
Top View  
Top View  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
2
1
2
BAS40-05-V  
BAS40-06-V  
3
3
1
2
1
2
18435  
Mechanical Data  
Case: SOT23, Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
Remarks  
BAS40-00-V  
BAS40-04-V  
BAS40-05-V  
BAS40-06-V  
BAS40-00-V-GS18 or BAS40-00-V-GS08  
BAS40-04-V-GS18 or BAS40-04-V-GS08  
BAS40-05-V-GS18 or BAS40-05-V-GS08  
BAS40-06-V-GS18 or BAS40-06-V-GS08  
43  
44  
45  
46  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Repetitive peak reverse voltage  
VRRM = VRWM = VR  
40  
V
2001)  
6001)  
2001)  
Forward continuous current  
IF  
mA  
mA  
mW  
Surge forward current  
Power dissipation1)  
tp < 1 s  
IFSM  
Ptot  
1) Device on fiberglass substrate, see layout on next page.  
Document Number 85701  
Rev. 1.7, 27-Sep-06  
www.vishay.com  
1

BAS40-05-V-GS18 替代型号

型号 品牌 替代类型 描述 数据表
BAS40-05-V-GS08 VISHAY

完全替代

Small Signal Schottky Diodes, Single & Dual
BAS40-05-E3-18 VISHAY

功能相似

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
BAS40-05-E3-08 VISHAY

功能相似

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

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