Datasheet > BAS40-06

BAS40-06

更新时间： 2024-11-24 08:48:27

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管光电二极管 IOT
页数	文件大小	规格书
2页	402K
描述
SCHOTTKY DIODE

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中文翻译

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数据手册

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BAS40-06 数据手册

BAS40/-04/-05/-06

SOT-23

SCHOTTKY DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40 MARKING: 43•

BAS40-06 MARKING: 46

BAS40-05 MARKING：45

BAS40-04 MARKING：44

Maximum Ratings @T_A=25℃

Parameter

Symbol

Limits

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

200

Forward continuous Current

I_FM

Power Dissipation

P_D

R_θJA

T_J

℃/W

℃

Thermal Resistance. Junction to Ambient Air

Junction temperature

625

125

Storage temperature range

T_STG

-65-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R= 10μA

MIN

MAX

200

UNIT

Reverse breakdown voltage

Reverse voltage leakage current

V_R=30V

I_F=1mA

380

Forward voltage

V_F

C_D

t _{r r}

I_F=40mA

1000

Diode capacitance

Reverse Recovery time

V_R=0,f=1MHz

I_rr=1mA, I_R=I_F=10mA

R_L=100Ω

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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