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BAS40-05-T PDF预览

BAS40-05-T

更新时间: 2024-11-06 14:49:39
品牌 Logo 应用领域
RECTRON 光电二极管
页数 文件大小 规格书
1页 84K
描述
Rectifier Diode, Schottky, 2 Element, 0.12A, Silicon, SMD, 3 PIN

BAS40-05-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.04配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.12 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265最大功率耗散:0.25 W
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS40-05-T 数据手册

  
BAS40  
BAS40-04  
BAS40-05  
BAS40-06  
SILICON PLANAR SCHOTTKY DIODE  
Pin Configuration:  
1. ANODE  
Pin Configuration:  
1. ANODE  
2. CATHODE  
2. NC  
3. ANODE/CATHODE  
3. CATHODE  
Pin Configuration:  
1. ANODE  
Pin Configuration:  
1. CATHODE  
2. CATHODE  
3. ANODE  
2. ANODE  
3. CATHODE  
Unit: inch (mm)  
SOT-23 SMD Package  
General Purpose Schottky Diode for High Speed switching  
Absolute Maximum Ratings (per diode)  
SYMBOL  
VALUE  
40  
120  
200  
250  
UNITS  
DESCRIPTION  
VR  
IF  
IFSM  
PD  
Reverse Voltage  
V
Forward Current  
mA  
mA  
mW  
Surge Forward Current t=10ms  
Power Dissipation Ta = 25oC  
Tstg  
Tj  
- 55 to +150  
150  
Storage Temperature Range  
Junction Temperature  
oC  
Thermal Resistance  
From junction to ambient  
K/W  
Rth(j-a)*  
430  
*Mounted on a ceramic substrate of 10mm x 8mm x 0.6mm  
Electrical Characteristics (Ta=25 oC unless otherwise specified) (per diode)  
SYMBOL TEST CONDITION  
MIN  
40  
MAX  
UNITS  
DESCRIPTION  
Reverse Braekdown Voltage  
IR = 10uA  
VR = 30V  
VR = 40V  
IF = 1mA  
IF = 10mA  
IF = 40mA  
VR = 40V  
VR  
V
1
Reverse Current  
IR  
uA  
V
10  
0.38  
0.50  
1.00  
5.00  
Forward Voltage  
VF  
CT  
Diode Capacitance  
pF  
www.rectron.com  
1 of 1  

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