Datasheet > BAS170H

BAS170H

更新时间： 2024-09-22 12:57:11

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描述
Patch Schottky diode 70V SOD-323 series

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BAS170H 数据手册

BAS170H

SURFACE MOUNT SCHOTTKY BARRIER DIODES

Features

Schottky diode for high-speed switching

Circuit protection

Voltage clamping

High-level detecting and mixing

SOD-323

Mechanical Data

Dim

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: S 7

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Parameter

Symbol

V_RRM

I _F

Value

Unit

Repetitive Peak Reverse Voltage

Forward Continuous Current at T_amb= 25°C

Surge Forward Current at t_p< 1s, T_amb= 25°C

Power Dissipation⁽¹⁾at T_amb= 25°C

Thermal Resistance Junction to Ambient Air⁽¹⁾

Junction Temperature

600

°C/W

°C

I_FSM

200

tot

R_θJA

T _j

650

150

Operating Temperature Range

T_op

T_S

–55 to +125

–55 to +150

°C

Storage Temperature Range

°C

Note: (1) Valid provided that electrodes are kept at ambient temperature

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

V_(BR)R

I_R= 10µA (pulsed)

—

Reverse Breakdown Voltage

Leakage Current

V_R= 50V

V_R= 70V

—

0.1

µA

I_F= 1mA

I_F= 10mA

I_F= 15mA⁽¹⁾

—

375

705

880

410

750

1000

Forward Voltage

Capacitance

V_F

V_R= 0V

C_tot

—

1.5

f = 1MHz

Charge Carrier Lifetime

R_F

I_F= 25mA

—

100

—

Differential Forward Resistance

I_E= 5mA, f = 10KH_Z

Ω

Note:(1) Pulse test; t ≤ 300µs

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