Datasheet > BAS170WS

BAS170WS

更新时间： 2024-09-22 12:53:47

品牌	Logo	应用领域
TYSEMI		肖特基二极管开关
页数	文件大小	规格书
1页	62K
描述
Schottky diode for high-speed switching High-level detecting and mixing

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BAS170WS 数据手册

Product specification

BAS170WS

SOD-323

Unit: mm

+0.1

-0.1

+0.05

0.85

-0.05

1.7

Features

Schottky diode for high-speed switching

Circuit protection

+0.1

-0.1

2.6

1.0max

0.475

0.375

Voltage clamping

High-level detecting and mixing

Absolute Maximum Ratings Ta = 25

PARAMATER

Repetitive peak reverse voltage

Forward continuous current

Surge forward current

SYMBOL

V^RM

I^F

TEST CONDITION

VALUE

UNIT

T^amb= 25

t^p< 1 s, T^amb= 25

T^amb= 25

I^FSM

P^tot

600

200

650

150

Power Dissipation ⁽¹⁾

Thermal resistance junction to ambient air⁽¹⁾

R^èJA

T^j

Junction temperature

Operating temperature range

Storage temperature range

R^amb

-55 to+125

1.valid provided that electrodes are kept at ambient temperature

Electrical Characteristics Ta = 25

PARAMATER

SYMBOL

V^(BR)R

TEST CONDITION

I^R= 10 A(Pulse)

V^R=50 V

MIN

TYP

MAX

UNIT

Reverse breakdown voltage

0.1

Leakage current

Forward voltage

I^R

V^R=70 V

I^F= 200 mA

375

705

880

1.5

100

410

750

1000

V^F

I < tief < F = 10 mA

V^F= 15 mA

Forward voltage ⁽¹⁾

Capacitance

V^F

Ctot

VR =0 V, f =1 MHz

I^F= 25 mA;

Charge carrier lifetime

Differential forward resistance

Note:

R^F

I^E= 5 mA; f = 10 kHz

1.Pulse test: tp

300

Marking

http://www.twtysemi.com

4008-318-123

sales@twtysemi.com

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