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BAS16

更新时间: 2024-09-29 22:48:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管光电二极管
页数 文件大小 规格书
2页 37K
描述
High Conductance Ultra Fast Diode

BAS16 数据手册

 浏览型号BAS16的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
BAS16  
CONNECTION DIAGRAM  
3
3
3
A6  
2 NC  
1
2
1
2
SOT-23  
1
High Conductance Ultra Fast Diode  
Sourced from Process 1P. See BAV99 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
Average Rectified Current  
DC Forward Current  
75  
V
IO  
200  
600  
700  
mA  
mA  
mA  
IF  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
Pulse width = 1.0 microsecond  
Storage Temperature Range  
if(surge)  
1.0  
2.0  
-50 to +150  
A
A
°C  
Tstg  
TJ  
Operating Junction Temperature  
150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BAS16  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
350  
2.8  
357  
mW  
mW/°C  
°C/W  
Rθ  
JA  
1997 Fairchild Semiconductor Corporation  

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