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BAS16_09 PDF预览

BAS16_09

更新时间: 2024-11-19 12:50:11
品牌 Logo 应用领域
德欧泰克 - DIOTEC 二极管开关
页数 文件大小 规格书
2页 124K
描述
Fast Switching Surface Mount Si-Planar Diodes

BAS16_09 数据手册

 浏览型号BAS16_09的Datasheet PDF文件第2页 
BAS16  
BAS16  
Fast Switching Surface Mount Si-Planar Diodes  
Schnelle Si-Planar-Dioden für die Oberflächenmontage  
Version 2009-01-29  
Power dissipation – Verlustleistung  
Repetitive peak reverse voltage  
310 mW  
85 V  
2.9±0.1  
Periodische Spitzensperrspannung  
1.1  
0.4  
3
Plastic case  
SOT-23  
Type  
Code  
Kunststoffgehäuse  
(TO-236)  
Weight approx. – Gewicht ca.  
0.01 g  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
1 = A 2 = n.c. /frei 3 = C  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BAS16  
Power dissipation − Verlustleistung  
Ptot  
310 mW 1)  
Max. average forward current – Dauergrenzstrom (dc)  
IFAV  
200 mA 1)  
Non repetitive peak forward surge current  
Stoßstrom-Grenzwert  
tp ≤ 1 s  
tp ≤ 1 µs  
IFSM  
IFSM  
1 A  
2 A  
Repetitive peak reverse voltage – Periodische Spitzensperrspannung  
VRRM  
85 V  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Forward voltage 2)  
IF = 1 mA  
VF  
VF  
VF  
VF  
< 715 mV  
< 855 mV  
< 1.0 V  
Durchlass-Spannung 2)  
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
< 1.25 V  
Leakage current  
Sperrstrom  
Tj = 25°C  
VR = 75 V  
IR  
< 1 µA  
Tj = 150°C VR = 25 V  
Tj = 150°C VR = 75 V  
IR  
IR  
< 30 µA  
< 50 µA  
Max. junction capacitance – Max. Sperrschichtkapazität  
VR = 0 V, f = 1 MHz  
CT  
2 pF  
Reverse recovery time – Sperrverzug  
Trr  
< 6 ns  
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA  
Thermal resistance junction to ambient air  
RthA  
< 400 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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