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BAS16/E9 PDF预览

BAS16/E9

更新时间: 2024-11-19 21:14:55
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管
页数 文件大小 规格书
4页 103K
描述
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, TO-236AB

BAS16/E9 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.01
其他特性:FAST SWITCHING配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值正向电流:2 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAS16/E9 数据手册

 浏览型号BAS16/E9的Datasheet PDF文件第2页浏览型号BAS16/E9的Datasheet PDF文件第3页浏览型号BAS16/E9的Datasheet PDF文件第4页 
BAS16  
Vishay Semiconductors  
VISHAY  
Fast Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
• Ultra fast switching speed  
• Surface mount package ideally suited for auto-  
matic insertion  
• High conductance  
3
16923  
Mechanical Data  
Case: SOT-23 Plastic Package  
Weight: approx. 8 mg  
Polarity: cathode band  
Marking: KA6  
1
2
Packaging Codes/Options:  
E8/10 K per 13" reel (8 mm tape), 30 K/box  
E9/3K per 7" reel (8 mm tape), 30 K/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
100  
Unit  
V
Non repetitive peak reverse voltage  
V
RM  
Repetitive peak reverse voltage = Working  
peak reverse voltage = DC Blocking voltage  
V
= V  
= V  
R
75  
V
RRM  
RWM  
Peak forward surge current  
t = 1 s  
I
I
1
2
A
A
p
FSM  
t =1 µs  
p
FSM  
Average forward current  
half wave rectification with resistive load and  
f 50 MHz, on ceramic substrate  
8 mm x10 mm x 0.7 mm  
I
150  
mA  
FAV  
Forward current  
on ceramic substrate  
8 mm x 10 mm x 0.7 mm  
I
300  
350  
mA  
F
Power dissipation  
on ceramic substrate  
P
mW  
tot  
8 mm x 10 mm x 0.7 mm  
Maximum Thermal Resistance  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
357  
Unit  
Junction ambient  
on ceramic substrate  
R
K/W  
thJA  
8 mm x 10 mm x 0.7 mm  
Junction and storage  
temperature range  
T = T  
- 55 to + 150  
°C  
j
stg  
Document Number 85539  
Rev. 3, 13-Jun-04  
www.vishay.com  
1

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