Datasheet > BAS16_09

BAS16_09

更新时间： 2024-09-30 08:48:19

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
4页	97K
描述
SURFACE MOUNT SWITCHING DIODE

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中文翻译

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BAS16_09 数据手册

BAS16 / MMBD4148 / MMBD914

SURFACE MOUNT SWITCHING DIODE

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Features

Mechanical Data

•

Fast Switching Speed

•

Case: SOT-23

Surface Mount Package Ideally Suited for Automated Insertion

For General Purpose Switching Applications

High Conductance

Qualified to AEC-Q101 Standards for High Reliability

Lead, Halogen and Antimony Free, RoHS Compliant

"Green' Device (Notes 3 and 4)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

•

SOT-23

TOP VIEW

Internal Schematic

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

300

200

I_O

2.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

P_D

Value

350

Unit

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

357

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Symbol

V_(BR)R

Min

Max

⎯

Unit

Test Condition

I_R= 100μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

0.715

0.855

1.0

Forward Voltage

V_F

⎯

1.25

V_R= 75V

μA

1.0

V_R= 75V, T_J= 150°C

V_R= 25V, T_J= 150°C

V_R= 20V

Leakage Current (Note 2)

I_R

Total Capacitance

2.0

4.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in².

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured

prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 4

www.diodes.com

July 2009

BAS16 / MMBD4148 / MMBD914

Document number: DS12003 Rev. 22 - 2

12 3 4

中文翻译

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