Datasheet > BAS16_09

BAS16_09

更新时间： 2024-11-19 08:48:19

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
4页	97K
描述
SURFACE MOUNT SWITCHING DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS16_09 数据手册

BAS16 / MMBD4148 / MMBD914

SURFACE MOUNT SWITCHING DIODE

Please click here to visit our online spice models database.

Features

Mechanical Data

•

Fast Switching Speed

•

Case: SOT-23

Surface Mount Package Ideally Suited for Automated Insertion

For General Purpose Switching Applications

High Conductance

Qualified to AEC-Q101 Standards for High Reliability

Lead, Halogen and Antimony Free, RoHS Compliant

"Green' Device (Notes 3 and 4)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

•

SOT-23

TOP VIEW

Internal Schematic

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

300

200

I_O

2.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

P_D

Value

350

Unit

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

357

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Symbol

V_(BR)R

Min

Max

⎯

Unit

Test Condition

I_R= 100μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

0.715

0.855

1.0

Forward Voltage

V_F

⎯

1.25

V_R= 75V

μA

1.0

V_R= 75V, T_J= 150°C

V_R= 25V, T_J= 150°C

V_R= 20V

Leakage Current (Note 2)

I_R

Total Capacitance

2.0

4.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in².

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured

prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 4

www.diodes.com

July 2009

BAS16 / MMBD4148 / MMBD914

Document number: DS12003 Rev. 22 - 2

12 3 4

中文翻译

下载PDF

与BAS16_09相关器件

型号	品牌	获取价格	描述	数据表
BAS16_11	MCC	获取价格	350mW 100Volt Switching Diode
BAS16_13	MCC	获取价格	350mW 100Volt Switching Diode
BAS16_14	TSC	获取价格	225mW SMD Switching Diode
BAS16_17	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAS16_D87Z	ONSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 85V V(RRM), Silicon
BAS16_R1_00001	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAS16_R2_00001	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
BAS16-02	INFINEON	获取价格	Silicon Switching Diode
BAS16-02GP	CHENMKO	获取价格	Rectifier Diode,
BAS16-02L	INFINEON	获取价格	Silicon Switching Diode

与BAS16_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

22
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

14
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

44
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

43

产品中心

服务支持

精选活动

关于我们

帮助中心

BAS16_09

BAS16_09 数据手册

与BAS16_09相关器件

与BAS16_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BAS16_09

BAS16_09 数据手册

与BAS16_09相关器件

与BAS16_09相关文章

您还可以找

您在本页遇到什么问题？