Datasheet > BAS16_09

BAS16_09

更新时间： 2024-11-19 06:41:27

品牌	Logo	应用领域
TSC		二极管开关
页数	文件大小	规格书
2页	92K
描述
225mW SMD Switching Diode

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BAS16_09 数据手册

BAS16

225mW SMD Switching Diode

Small Signal Diode

SOT-23

Features

Low power loss, high current capability, low V^F

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

0.059 0.067

Dimensions

Min

1.50

3.55

0.45

2.60

1.05

0.08

Max

1.70

Mechanical Data

Case : SOT- 23 small outline plastic package

3.85 0.140 0.152

0.65 0.018 0.026

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

2.80

1.25

0.15

0.102 0.11

0.041 0.049

0.003 0.006

0.50 REF

0.02 REF

Ordering Information

Part No.

Packing

Package

SOT-23

BAS116 RF

3Kpcs/7" Reel

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

225

V_RRM

Repetitive Peak Reverse Voltage

Mean Forward Current

150

Non-Repetitive Peak Forward Surge Current @ t= 0.001s

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

IFSM

RθJA

T^J, TSTG

375

°C/W

°C

-65 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

I_R=

IF=

I^F=

V_R=

V(BR)

Reverse Breakdown Voltage

100μA

1.0mA

10mA

50mA

150mA

75V

0.715

0.855

1.0

Forward Voltage

V^F

1.25

I^R

Reverse Leakage Current

Junction Capacitance

Trr

2.0

V^R=0, f=1.0MHz

6.0

Reverse Recovery Time (Note 2)

Notes:1. Valid provided that electrodes are kept at ambient temperature

Notes:2. Reverse Recovery Test Conditions: I =10mA, I_R=10mA, R_L=100Ω, I_RR=1mA

Version : B09

中文翻译

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