Datasheet > BAS116DY

BAS116DY

更新时间： 2023-09-03 20:36:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	202K
描述
Low-leakage dual switching diodeProduction

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BAS116DY 数据手册

BAS116DY

Low-leakage dual switching diode

19 April 2023

Product data sheet

1. General description

Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low leakage current: maximum 5 nA

•

Switching time: typical 0.8 µs

Continuous reverse voltage: maximum 75 V

Repetitive peak reverse voltage: maximum 85 V

Repetitive peak forward current: maximum 1 A

3. Applications

•

Low-leakage current applications in surface mounted circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Per diode

V_R

Parameter

Conditions

Min

Typ

Max

Unit

reverse voltage

reverse current

T_j= 25 °C

I_R

V_R= 75 V; pulsed; T_j= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

anode (diode 1)

not connected

cathode (diode 2)

anode (diode 2)

not connected

cathode (diode 1)

n.c.

TSSOP6 (SOT363)

aaa-033905

12 3 4 5 6 7...9

中文翻译

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