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BAR74TA

更新时间: 2024-11-05 14:48:15
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 52K
描述
Rectifier Diode, 1 Element, 0.1A, Silicon

BAR74TA 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.37
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.5 W认证状态:Not Qualified
参考标准:CECC50001-064最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAR74TA 数据手册

 浏览型号BAR74TA的Datasheet PDF文件第2页 
SOT23 HIGH SPEED SWITCHING DIODES  
BAL74  
BAR74  
ISSUE 3 – FEBRUARY 1997  
PIN CONFIGURATION  
2
1
PARTMARKING DETAILS  
BAL74 – JC  
3
BAR74 – JB  
SOT23  
BAL74  
BAR74  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
50  
UNIT  
V
Continuous Reverse Voltage  
VR  
Io  
Average Output Rectified Current  
(tav = 10ms)  
100  
mA  
Continuous Forward Current  
IF  
150  
200  
mA  
mA  
A
Peak Forward Current ( t = 15ms)  
Forward Surge Current (t = 1µs)  
Operating and Storage Temperature Range  
Power Dissipation at Tamb =25°C  
IFM  
IFS  
1
Tj:Tstg  
Ptot  
-55 to +150  
330  
°
C
mW  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Breakdown Voltage  
Forward Voltage  
Reverse current  
VBR  
VF  
51  
V
V
IR = 5µA  
1.0  
IF = 100mA  
IR  
0.1  
100  
VR = 50V  
VR = 50V, Tamb = 125°C  
VR = 0  
µA  
µA  
Capacitance  
Co  
2.0  
pF  
Reverse Recovery Time trr  
4
2
ns  
ns  
IF = IR = 10mA, IRR = 1mA  
IF = 10mA, VR = 6V  
RL = 100Ω  
Spice parameter data is available upon request for this device  
PAGE NO  

BAR74TA 替代型号

型号 品牌 替代类型 描述 数据表
CMPD914ETR CENTRAL

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CMPD914E CENTRAL

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BAR74 INFINEON

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