Datasheet > BAR81

BAR81

更新时间： 2024-06-27 12:14:01

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	34K
描述
Silicon RF Switching Diode

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中文翻译

获取价格

数据手册

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BAR81 数据手册

SMD Type

Diodes

Silicon RF Switching Diodes

BAR81

Unit: mm

Features

Design for use in shunt configuration

High shunt signal isolation

Low shunt insertion loss

Absolute M axim um Ratings Ta = 25

Param eter

Diode reverse voltage

Forward current

Sym bol

V^R

Value

Unit

I^F

100

m A

Junction tem perature

Operating tem perature range

Storage tem perature

T^j

150

Top

Tstg

-55 to +125

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Reverse current

Symbol

I^R

Conditions

Min

Typ

Max

Unit

VR = 20 V

Forward voltage

V^F

IF = 100 mA

0.93

0.6

V^R= 1 V, f = 1 MHz

V^R= 3 V, f = 1 MHz

I^F= 5 mA, f = 100 MHz

Diode capacitance

C^T

0.57

0.7

Forward resistance

Series inductance chip to ground

1.5

Marking

Type

BAR81

BBs

Marking

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中文翻译

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