Datasheet > ATF36077

ATF36077

更新时间： 2024-11-26 22:31:23

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
4页	49K
描述
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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中文翻译

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技术参数
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ATF36077 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	最大漏极电流 (Abs) (ID)：	0.06 A
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	功耗环境最大值：	0.18 W
子类别：	FET RF Small Signal	端子面层：	Tin/Lead (Sn/Pb)

ATF36077 数据手册

2–18 GHz Ultra Low Noise

Pseudomorphic HEMT

Technical Data

ATF-36077

77 Package

Features

• PHEMT Technology

Description

Hewlett-Packard’sATF-36077is

an ultra-low-noise Pseudomorphic

High Electron Mobility Transistor

(PHEMT), packaged in a low

parasitic, surface-mountable

ceramic package. Properly

matched, this transistor will

provide typical 12 GHz noise

figures of 0.5 dB, or typical 4 GHz

noise figures of 0.3 dB. Addition-

ally, the ATF-36077 has very low

noise resistance, reducing the

sensitivity of noise performance

to variations in input impedance

match, making the design of

broadband low noise amplifiers

much easier. The premium

• Ultra-Low Noise Figure:

0.5 dB Typical at 12 GHz

0.3 dB Typical at 4 GHz

• High Associated Gain:

12 dB Typical at 12 GHz

17 dB Typical at 4 GHz

• Low Parasitic Ceramic

Microstrip Package

• Tape-and-Reel Packing

Option Available

Pin Configuration

SOURCE

Applications

• 12 GHz DBS LNB (Low Noise

Block)

• 4 GHz TVRO LNB (Low Noise

Block)

• Ultra-Sensitive Low Noise

Amplifiers

DRAIN

GATE

sensitivity of the ATF-36077

makes this device the ideal choice

for use in the first stage of

SOURCE

extremely low noise cascades.

The repeatable performance and

consistency make it appropriate

for use in Ku-band Direct Broad-

cast Satellite (DBS) Television

systems, C-band Television

Receive Only (TVRO) LNAs, or

other low noise amplifiers

operatinginthe2-18 GHz

Note: 1. See Noise Parameter Table.

1.2

0.8

0.4

NF^[1]

frequency range.

This GaAs PHEMT device has a

nominal 0.2 micron gate length

with a total gate periphery (width)

of 200 microns. Proven gold based

metalization systems and nitride

passivation assure rugged, reliable

devices.

FREQUENCY (GHz)

Figure 1. ATF-36077 Optimum Noise

Figure and Associated Gain vs.

Frequency for V_DS= 1.5 V, I_D= 10 mA.

5965-8726E

5-75

12 3 4

中文翻译

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与ATF36077相关器件

型号	品牌	获取价格	描述	数据表
ATF-36077	AGILENT	获取价格	2-18 GHz Ultra Low Noise Pseudomorphic HEMT
ATF-36077STR	AGILENT	获取价格	KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-36077-STR	AGILENT	获取价格	2-18 GHz Ultra Low Noise Pseudomorphic HEMT
ATF-36077STRG	AGILENT	获取价格	KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-36077-STRG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36077TR1	AGILENT	获取价格	KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-36077-TR1	AVAGO	获取价格	2â18 GHz Ultra Low Noise Pseudomorphic HEMT
ATF-36077TR1G	AGILENT	获取价格	KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-36077-TR1G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36077-TRI	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,

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