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ATF-36077-TR1G

更新时间： 2024-11-28 03:57:55
品牌 Logo 应用领域
安捷伦 - AGILENT 放大器晶体管
页数 文件大小 规格书
4页 40K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4

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ATF-36077-TR1G 技术参数

生命周期：Transferred包装说明：DISK BUTTON, O-CRDB-F4
针数：4Reach Compliance Code：unknown
风险等级：5.07其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：3 VFET 技术：HIGH ELECTRON MOBILITY
最高频带：KU BANDJESD-30 代码：O-CRDB-F4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：DISK BUTTON
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：11 dB
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：RADIAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

ATF-36077-TR1G 数据手册

 浏览型号ATF-36077-TR1G的Datasheet PDF文件第2页浏览型号ATF-36077-TR1G的Datasheet PDF文件第3页浏览型号ATF-36077-TR1G的Datasheet PDF文件第4页 
2–18 GHz Ultra Low Noise  
Pseudomorphic HEMT  
Technical Data  
ATF-36077  
77 Package  
Features  
• PHEMT Technology  
• Ultra-Low Noise Figure:  
0.5 dB Typical at 12 GHz  
0.3 dB Typical at 4 GHz  
Description  
Agilent’s ATF-36077 is an ultra-  
low-noise Pseudomorphic High  
Electron Mobility Transistor  
(PHEMT), packaged in a low  
parasitic, surface-mountable  
ceramic package. Properly  
matched, this transistor will  
provide typical 12 GHz noise  
figures of 0.5 dB, or typical 4 GHz  
noise figures of 0.3 dB. Addition-  
ally, the ATF-36077 has very low  
noise resistance, reducing the  
sensitivity of noise performance  
to variations in input impedance  
match, making the design of  
broadband low noise amplifiers  
much easier. The premium  
• High Associated Gain:  
12 dB Typical at 12 GHz  
17 dB Typical at 4 GHz  
• Low Parasitic Ceramic  
Microstrip Package  
• Tape-and-Reel Packing  
Option Available  
Pin Configuration  
4
SOURCE  
Applications  
• 12 GHz DBS LNB ( Low Noise  
Block)  
• 4 GHz TVRO LNB ( Low Noise  
Block)  
• Ultra-Sensitive Low Noise  
Amplifiers  
1
3
DRAIN  
GATE  
sensitivity of the ATF-36077  
makes this device the ideal choice  
for use in the first stage of  
2
SOURCE  
extremely low noise cascades.  
The repeatable performance and  
consistency make it appropriate  
for use in Ku-band Direct Broad-  
cast Satellite (DBS) Television  
systems, C-band Television  
Receive Only (TVRO) LNAs, or  
other low noise amplifiers  
operating in the 2-18 GHz  
25  
Note: 1. See Noise Parameter Table.  
20  
Ga  
15  
10  
1.2  
0.8  
0.4  
0
NF[1]  
frequency range.  
This GaAs PHEMT device has a  
nominal 0.2 micron gate length  
with a total gate periphery (width)  
of 200 microns. Proven gold based  
metalization systems and nitride  
passivation assure rugged, reliable  
devices.  
4
0
8
12  
16  
20  
FREQUENCY (GHz)  
Figure 1. ATF-36077 Optimum Noise  
Figure and Associated Gain vs.  
Frequency for VDS = 1.5 V, ID = 10 mA.  
1234

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