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ATF-36163-TR2G PDF预览

ATF-36163-TR2G

更新时间： 2024-11-27 06:38:35
品牌 Logo 应用领域
安华高科 - AVAGO 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
10页 177K
描述
1.5-18 GHz Surface Mount Pseudomorphic HEMT

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中文翻译

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ATF-36163-TR2G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.23
Is Samacsys：N其他特性：LOW NOISE
配置：SINGLE最小漏源击穿电压：3 V
最大漏极电流 (Abs) (ID)：0.04 AFET 技术：HIGH ELECTRON MOBILITY
最高频带：KU BANDJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL功耗环境最大值：0.18 W
最小功率增益 (Gp)：9.4 dB认证状态：Not Qualified
子类别：FET RF Small Signal表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

ATF-36163-TR2G 数据手册

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ATF-36163  
1.5 –18 GHz Surface Mount Pseudomorphic HEMT  
Data Sheet  
Description  
Features  
The Avago ATF-36163 is a low-noise Pseudomorphic  
High Electron MobilityTransistor (PHEMT), in the SOT-363  
(SC-70) package. When optimally matched for minimum  
noise figure, it will provide a noise figure of 1 dB at 12  
GHz and 0.6 dB at 4 GHz.  
• Lead-free Option Available  
• Low Minimum Noise Figure:  
1 dB Typical at 12 GHz  
0.6 dB Typical at 4 GHz  
• Associated Gain:  
9.4 dB Typical at 12 GHz  
15.8 dB Typical at 4 GHz  
Additionally, the ATF-36163 has low noise-resistance,  
which reduces the sensitivity of noise performance to  
variations in input impedance match. This feature makes  
the design of broad band low noise amplifiers much  
easier. The performance of the ATF-36163 makes this  
device the ideal choice for use in the 2nd or 3rd stage  
of low noise cascades. The repeatable performance and  
consistency make it appropriate for use in Ku-band Direct  
Broadcast Satellite (DBS) TV systems, C-band TV Receive  
Only (TVRO) LNAs, Multichannel Multipoint Distribution  
Systems (MMDS), X-band Radar detector and other low  
noise amplifiers operating in the 1.5 –18 GHz frequency  
range.  
• Maximum Available Gain:  
11 dB Typical at 12 GHz  
17 dB Typical at 4 GHz  
• Low Cost Surface Mount Small Plastic Package  
• Tape-and-Reel Packaging Option Available  
Applications  
• 12 GHz DBS Downconverters  
• 4 GHz TVRO Downconverters  
• S or L Band Low Noise Amplifiers  
This GaAs PHEMT device has a nominal 0.2 micron gate  
length with a total gate periphery (width) of 200 microns.  
Proven gold-based metallization system and nitride Pin Connections and Package Marking  
passivation assure rugged, reliable devices.  
SOURCE  
SOURCE  
GATE  
DRAIN  
Surface Mount Package  
SOT-363 (SC-70)  
SOURCE  
SOURCE  
Note: Top View. Package marking provides orientation and  
identification.  
“ 36 “ = Device code  
“ x “ = Data code character  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model (Class A)  
Refer to Avago Application Note A004R:  
Electrostatic Discharge Damage and Control.  
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ATF-38143-TR1G AVAGO

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 		X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE, PLASTIC, SC-70, 4 PIN
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ATF-38143-TR2G AGILENT

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