Datasheet > ATF-36077STRG

ATF-36077STRG

更新时间： 2024-11-28 03:10:11

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器晶体管
页数	文件大小	规格书
4页	40K
描述
KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET

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ATF-36077STRG 数据手册

2–18 GHz Ultra Low Noise

Pseudomorphic HEMT

Technical Data

ATF-36077

77 Package

Features

• PHEMT Technology

• Ultra-Low Noise Figure:

0.5 dB Typical at 12 GHz

0.3 dB Typical at 4 GHz

Description

Agilent’s ATF-36077 is an ultra-

low-noise Pseudomorphic High

Electron Mobility Transistor

(PHEMT), packaged in a low

parasitic, surface-mountable

ceramic package. Properly

matched, this transistor will

provide typical 12 GHz noise

figures of 0.5 dB, or typical 4 GHz

noise figures of 0.3 dB. Addition-

ally, the ATF-36077 has very low

noise resistance, reducing the

sensitivity of noise performance

to variations in input impedance

match, making the design of

broadband low noise amplifiers

much easier. The premium

• High Associated Gain:

12 dB Typical at 12 GHz

17 dB Typical at 4 GHz

• Low Parasitic Ceramic

Microstrip Package

• Tape-and-Reel Packing

Option Available

Pin Configuration

SOURCE

Applications

• 12 GHz DBS LNB ( Low Noise

Block)

• 4 GHz TVRO LNB ( Low Noise

Block)

• Ultra-Sensitive Low Noise

Amplifiers

DRAIN

GATE

sensitivity of the ATF-36077

makes this device the ideal choice

for use in the first stage of

SOURCE

extremely low noise cascades.

The repeatable performance and

consistency make it appropriate

for use in Ku-band Direct Broad-

cast Satellite (DBS) Television

systems, C-band Television

Receive Only (TVRO) LNAs, or

other low noise amplifiers

operating in the 2-18 GHz

Note: 1. See Noise Parameter Table.

1.2

0.8

0.4

NF^[1]

frequency range.

This GaAs PHEMT device has a

nominal 0.2 micron gate length

with a total gate periphery (width)

of 200 microns. Proven gold based

metalization systems and nitride

passivation assure rugged, reliable

devices.

FREQUENCY (GHz)

Figure 1. ATF-36077 Optimum Noise

Figure and Associated Gain vs.

Frequency for V_DS= 1.5 V, I_D= 10 mA.

12 3 4

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ATF-36077-TR1	AVAGO	获取价格	2â18 GHz Ultra Low Noise Pseudomorphic HEMT
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ATF-36077-TRIG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36077-TRL	AGILENT	获取价格	2-18 GHz Ultra Low Noise Pseudomorphic HEMT
ATF36163	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, N-Channel
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