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ATF-36077-STR

更新时间： 2024-11-26 22:47:59
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数 文件大小 规格书
4页 49K
描述
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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ATF-36077-STR 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：DISK BUTTON, O-CRDB-F4针数：4
Reach Compliance Code：unknown风险等级：5.07
Is Samacsys：N其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：3 V最大漏极电流 (Abs) (ID)：0.045 A
FET 技术：HIGH ELECTRON MOBILITY最高频带：KU BAND
JESD-30 代码：O-CRDB-F4JESD-609代码：e0
元件数量：1端子数量：4
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL功耗环境最大值：0.18 W
最小功率增益 (Gp)：11 dB认证状态：Not Qualified
子类别：FET RF Small Signal表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：FLAT
端子位置：RADIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

ATF-36077-STR 数据手册

 浏览型号ATF-36077-STR的Datasheet PDF文件第2页浏览型号ATF-36077-STR的Datasheet PDF文件第3页浏览型号ATF-36077-STR的Datasheet PDF文件第4页 
2–18 GHz Ultra Low Noise  
Pseudomorphic HEMT  
Technical Data  
ATF-36077  
77 Package  
Features  
• PHEMT Technology  
Description  
Hewlett-Packard’sATF-36077is  
an ultra-low-noise Pseudomorphic  
High Electron Mobility Transistor  
(PHEMT), packaged in a low  
parasitic, surface-mountable  
ceramic package. Properly  
matched, this transistor will  
provide typical 12 GHz noise  
figures of 0.5 dB, or typical 4 GHz  
noise figures of 0.3 dB. Addition-  
ally, the ATF-36077 has very low  
noise resistance, reducing the  
sensitivity of noise performance  
to variations in input impedance  
match, making the design of  
broadband low noise amplifiers  
much easier. The premium  
• Ultra-Low Noise Figure:  
0.5 dB Typical at 12 GHz  
0.3 dB Typical at 4 GHz  
• High Associated Gain:  
12 dB Typical at 12 GHz  
17 dB Typical at 4 GHz  
• Low Parasitic Ceramic  
Microstrip Package  
• Tape-and-Reel Packing  
Option Available  
Pin Configuration  
4
SOURCE  
Applications  
• 12 GHz DBS LNB (Low Noise  
Block)  
• 4 GHz TVRO LNB (Low Noise  
Block)  
• Ultra-Sensitive Low Noise  
Amplifiers  
1
3
DRAIN  
GATE  
sensitivity of the ATF-36077  
makes this device the ideal choice  
for use in the first stage of  
2
SOURCE  
extremely low noise cascades.  
The repeatable performance and  
consistency make it appropriate  
for use in Ku-band Direct Broad-  
cast Satellite (DBS) Television  
systems, C-band Television  
Receive Only (TVRO) LNAs, or  
other low noise amplifiers  
operatinginthe2-18 GHz  
25  
Note: 1. See Noise Parameter Table.  
20  
Ga  
15  
10  
1.2  
0.8  
0.4  
0
NF[1]  
frequency range.  
This GaAs PHEMT device has a  
nominal 0.2 micron gate length  
with a total gate periphery (width)  
of 200 microns. Proven gold based  
metalization systems and nitride  
passivation assure rugged, reliable  
devices.  
4
0
8
12  
16  
20  
FREQUENCY (GHz)  
Figure 1. ATF-36077 Optimum Noise  
Figure and Associated Gain vs.  
Frequency for VDS = 1.5 V, ID = 10 mA.  
5965-8726E  
5-75  
1234

中文翻译

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ATF-36077-TRI AGILENT

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 		RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36077-TRIG AGILENT

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