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ATF-36163-TR1G PDF预览

ATF-36163-TR1G

更新时间： 2024-02-04 12:01:26
品牌 Logo 应用领域
安捷伦 - AGILENT 放大器光电二极管晶体管
页数 文件大小 规格书
11页 112K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN

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ATF-36163-TR1G 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.14Is Samacsys：N
其他特性：LOW NOISE配置：SINGLE
最小漏源击穿电压：3 V最大漏极电流 (ID)：0.04 A
FET 技术：HIGH ELECTRON MOBILITY最高频带：KU BAND
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：0.18 W最小功率增益 (Gp)：9.4 dB
认证状态：Not Qualified子类别：FET RF Small Signal
表面贴装：YES端子面层：TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

ATF-36163-TR1G 数据手册

 浏览型号ATF-36163-TR1G的Datasheet PDF文件第2页浏览型号ATF-36163-TR1G的Datasheet PDF文件第3页浏览型号ATF-36163-TR1G的Datasheet PDF文件第4页浏览型号ATF-36163-TR1G的Datasheet PDF文件第5页浏览型号ATF-36163-TR1G的Datasheet PDF文件第6页浏览型号ATF-36163-TR1G的Datasheet PDF文件第7页 
1.5–18 GHz Surface Mount  
Pseudomorphic HEMT  
Technical Data  
ATF-36163  
Features  
• Lead-free Option Available  
• Low Minimum Noise Figure:  
1 dB Typical at 12 GHz  
0.6 dB Typical at 4 GHz  
Surface Mount Package  
SOT-363 (SC-70)  
Additionally, the ATF-36163 has  
low noise-resistance, which  
reduces the sensitivity of noise  
performance to variations in  
input impedance match. This  
feature makes the design of broad  
band low noise amplifiers much  
easier. The performance of the  
ATF-36163 makes this device the  
ideal choice for use in the 2nd or  
3rd stage of low noise cascades.  
The repeatable performance and  
consistency make it appropriate  
for use in Ku-band Direct  
Broadcast Satellite (DBS) TV  
systems, C-band TV Receive Only  
(TVRO) LNAs, Multichannel  
Multipoint Distribution Systems  
(MMDS), X-band Radar detector  
and other low noise amplifiers  
operating in the 1.5 –18 GHz  
frequency range.  
• Associated Gain:  
9.4 dB Typical at 12 GHz  
15.8 dB Typical at 4 GHz  
• Maximum Available Gain:  
11 dB Typical at 12 GHz  
17 dB Typical at 4 GHz  
Pin Connections and  
Package Marking  
• Low Cost Surface Mount  
Small Plastic Package  
• Tape-and-Reel Packaging  
Option Available  
SOURCE  
SOURCE  
GATE  
DRAIN  
SOURCE  
SOURCE  
Applications  
• 12 GHz DBS Downconverters  
• 4 GHz TVRO Downconverters  
• S or L Band Low Noise  
Amplifiers  
Note: Package marking provides  
orientation and identification.  
Description  
This GaAs PHEMT device has a  
nominal 0.2 micron gate length  
with a total gate periphery  
(width) of 200 microns. Proven  
gold-based metallization system  
and nitride passivation assure  
rugged, reliable devices.  
The Agilent ATF-36163 is a low-  
noise Pseudomorphic High  
Electron Mobility Transistor  
(PHEMT), in the SOT-363 (SC-70)  
package. When optimally matched  
for minimum noise figure, it will  
provide a noise figure of 1 dB at  
12 GHz and 0.6 dB at 4 GHz.  
Attention:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
ESD Machine Model (Class A)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
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