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ATF-36163

更新时间： 2024-11-26 22:47:59

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
10页	96K
描述
1.5-18 GHz Surface Mount Pseudomorphic HEMT

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中文翻译

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数据手册

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ATF-36163 数据手册

1.5–18 GHz Surface Mount

Pseudomorphic HEMT

Technical Data

ATF-36163

Features

• Low Minimum Noise Figure:

1 dB Typical at 12 GHz

0.6 dB Typical at 4 GHz

• Associated Gain:

9.4 dB Typical at 12 GHz

15.8 dB Typical at 4 GHz

• Maximum Available Gain:

11 dB Typical at 12 GHz

17 dB Typical at 4 GHz

• Low Cost Surface Mount

Small Plastic Package

• Tape-and-Reel Packaging

Option Available

Surface Mount Package

SOT-363 (SC-70)

Additionally, the ATF-36163 has

low noise-resistance, which

reduces the sensitivity of noise

performance to variations in

input impedance match. This

feature makes the design of broad

band low noise amplifiers much

easier. The performance of the

ATF-36163 makes this device the

ideal choice for use in the 2nd or

3rd stage of low noise cascades.

The repeatable performance and

consistency make it appropriate

for use in Ku-band Direct

Broadcast Satellite (DBS) TV

systems, C-band TV Receive Only

(TVRO) LNAs, Multichannel

Multipoint Distribution Systems

(MMDS), X-band Radar detector

and other low noise amplifiers

operating in the 1.5–18 GHz

frequency range.

Pin Connections and

Package Marking

SOURCE

GATE

DRAIN

SOURCE

Applications

• 12 GHz DBS Downconverters

• 4 GHz TVRO Downconverters

• S or L Band Low Noise

Amplifiers

Note: Package marking provides

orientation and identification.

Description

This GaAs PHEMT device has a

nominal 0.2 micron gate length

with a total gate periphery

(width) of 200 microns. Proven

gold-based metallization system

and nitride passivation assure

rugged, reliable devices.

TheHewlett-PackardATF-36163

is a low-noise Pseudomorphic

High Electron Mobility Transistor

(PHEMT), intheSOT-363(SC-70)

package. When optimally matched

for minimum noise figure, it will

provide a noise figure of 1 dB at

12GHzand0.6 dBat4GHz.

5965-4747E

5-79

12 3 4 5 6 7...10

中文翻译

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与ATF-36163相关器件

型号	品牌	获取价格	描述	数据表
ATF36163BLK	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 3V V(BR)DSS \| 40MA I(D) \| SOT-363
ATF-36163-BLK	AGILENT	获取价格	1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-BLKG	AVAGO	获取价格	1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-BLKG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36163-TR1	AGILENT	获取价格	1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-TR1G	AVAGO	获取价格	1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-TR1G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36163-TR2	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,
ATF-36163-TR2G	AVAGO	获取价格	1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-TR2G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel,