ATF-25170

更新时间： 2024-01-10 10:48:50

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管放大器
页数	文件大小	规格书
3页	46K
描述
0.5-10 GHz Low Noise Gallium Arsenide FET

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中文翻译

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技术参数
数据手册

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ATF-25170 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	Is Samacsys：	N
FET 技术：	JUNCTION	JESD-609代码：	e0
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	Other Transistors	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ATF-25170 数据手册

0.5–10 GHz Low Noise

Gallium Arsenide FET

Technical Data

ATF-25170

housed in a hermetic, high reliabil-

Features

70 mil Package

ity package. Its noise figure makes

this device appropriate for use in

low noise amplifiers operating in

the0.5-10GHzfrequencyrange.

• Low Noise Figure:

0.8 dBTypicalat4 GHz

• High Associated Gain:

14.0 dBTypicalat4 GHz

• High Output Power:

This GaAs FET device has a

nominal 0.3 micron gate length

using airbridge interconnects

between drain fingers. Total gate

periphery is 500 microns. Proven

gold based metallization systems

and nitride passivation assure a

rugged, reliable device.

21.0 dBmTypicalP _1dBat4 GHz

• Hermetic Gold-Ceramic

Microstrip Package

Description

The ATF-25170 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

NF_O

Optimum Noise Figure: V_DS= 3 V, I_DS= 20 mA

f=4.0GHz

f=60GHz

f=8.0GHz

0.8

1.0

1.2

1.0

G_A

Gain@NF_O:V_DS=3V, I_DS= 20 mA

f=4.0GHz

f=6.0GHz

f=8.0GHz

13.0

14.0

11.5

9.0

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=5V,I_DS=50mA

f=4.0GHz dBm

21.0

G_{1 dB}

g_m

1 dB Compressed Gain: V_DS=5 V, I_DS=50 mA

Transconductance: V_DS= 3 V, V_GS= 0 V

Saturated Drain Current: V_DS=3 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 3 V, I_DS= 1 mA

f=4.0GHz

mmho 50

15.0

I_DSS

V_P

100

-2.0

150

-0.8

-3.0

5965-8712E

5-57

12 3

中文翻译

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与ATF-25170相关器件

型号	品牌	获取价格	描述	数据表
ATF25570	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 50MA I(DSS) \| MICRO-XVAR
ATF-25570	AGILENT	获取价格	0.5-10 GHz General Purpose Gallium Arsenide FET
ATF25735	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 50MA I(DSS) \| MICRO-XVAR
ATF-25735	AGILENT	获取价格	0.5-10 GHz General Purpose Gallium Arsenide FET
ATF26150	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 30MA I(DSS) \| MICRO-XVAR
ATF26350	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 30MA I(DSS) \| MICRO-XVAR
ATF26550	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 30MA I(DSS) \| MICRO-XVAR
ATF26836	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 30MA I(DSS) \| MICRO-X
ATF-26836	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
ATF-26836-STR	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET