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AT49BV640T-85TI PDF预览

AT49BV640T-85TI

更新时间： 2024-11-27 20:54:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路闪存
页数 文件大小 规格书
30页 194K
描述
Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48

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AT49BV640T-85TI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.91
最长访问时间：85 ns启动块：TOP
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：8,127端子数量：48
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE页面大小：4 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：4K,32K最大待机电流：0.00001 A
子类别：Flash Memories最大压摆率：0.05 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

AT49BV640T-85TI 数据手册

 浏览型号AT49BV640T-85TI的Datasheet PDF文件第2页浏览型号AT49BV640T-85TI的Datasheet PDF文件第3页浏览型号AT49BV640T-85TI的Datasheet PDF文件第4页浏览型号AT49BV640T-85TI的Datasheet PDF文件第5页浏览型号AT49BV640T-85TI的Datasheet PDF文件第6页浏览型号AT49BV640T-85TI的Datasheet PDF文件第7页 
Features  
• 64-megabit (4M x 16) Flash Memory  
• 2.7V - 3.6V Read/Write  
• High Performance  
– Asynchronous Access Time – 70 ns  
– Page Mode Read Time – 20 ns  
• Sector Erase Architecture  
– Eight 4K Word Sectors with Individual Write Lockout  
– 32K Word Main Sectors with Individual Write Lockout  
• Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms  
• Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming Data from Any Sector by Suspending Erase  
of a Different Sector  
64-megabit  
(4M x 16)  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
• Low-power Operation  
Page Mode  
2.7-volt Flash  
Memory  
– 30 mA Active  
– 10 µA Standby  
• 1.8V I/O Option Reduces Overall System Power  
• Data Polling and Toggle Bit for End of Program Detection  
• VPP Pin for Write Protection and Accelerated Program/Erase Operations  
• RESET Input for Device Initialization  
• TSOP or CBGA Package  
• Top or Bottom Boot Block Configuration Available  
• 128-bit Protection Register  
• Common Flash Interface (CFI)  
AT49BV640  
AT49BV640T  
Description  
The AT49BV640(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided  
into multiple sectors for erase operations. The device can be read or reprogrammed  
off a single 2.7V power supply, making it ideally suited for in-system programming.  
The output voltage can be separately controlled down to 1.65V through the VCCQ  
supply pin. This device can operate in the asynchronous or page read mode.  
Preliminary  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors.  
The end of a program or an erase cycle is detected by Data Polling or the toggle bit.  
The VPP pin provides data protection and faster programming and erase times. When  
the VPP input is below 0.8V, the program and erase functions are inhibited. When VPP  
is at 1.65V or above, normal program and erase operations can be performed. With  
VPP at 12.0V, the program and erase operations are accelerated.  
With VPP at 12V, a six-byte command (Enter Single Pulse Program Mode) to remove  
the requirement of entering the three-byte program sequence is offered to further  
improve programming time. After entering the six-byte code, only single pulses on the  
write control lines are required for writing into the device. This mode (Single Pulse  
Word Program) is exited by powering down the device, by taking the RESET pin to  
GND or by a high-to-low transition on the VPP input. Erase, Erase Suspend/Resume,  
Program Suspend/Resume and Read Reset commands will not work while in this  
mode; if entered they will result in data being programmed into the device. It is not rec-  
ommended that the six-byte code reside in the software of the final product but only  
exist in external programming code.  
Rev. 3366B–FLASH–8/03  
1234567...30

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与AT49BV640T-85TI相关器件

型号 品牌 获取价格 描述 数据表
AT49BV640T-85TJ ATMEL

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 		Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV6416 ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416(T) ETC

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 		AT49BV6416(T)/BN6416(T) Advance Information [Updated 5/03. 38 Pages] 64M bit. 2.7-Volt Bur
AT49BV6416-70TI ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416-70TU ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416-85CI ATMEL

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 		Flash, 4MX16, 85ns, CBGA55, 8 X 11 MM, 1 MM HEIGHT, 0.75 MM PITCH, CERAMIC, BGA-55
AT49BV6416-85TI ATMEL

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 		Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV6416-85TU ATMEL

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 		Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV6416C ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416C-70CI ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory

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