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AT49BV8011-12CI PDF预览

AT49BV8011-12CI

更新时间: 2024-11-21 05:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
18页 307K
描述
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

AT49BV8011-12CI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:PLASTIC, CBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:120 ns
其他特性:USER CONFIGURABLE AS 512K X 16; SECTOR ERASE备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:S-PBGA-B48
JESD-609代码:e0长度:7 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:2,4,2,14端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:SQUARE
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:7 mm
Base Number Matches:1

AT49BV8011-12CI 数据手册

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Features  
Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV)  
Access Time – 90 ns  
Sector Erase Architecture  
Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout  
Two 16K Word (32K Byte) Sectors with Individual Write Lockout  
Two 8K Word (16K Byte) Sectors with Individual Write Lockout  
Four 4K Word (8K Byte) Sectors with Individual Write Lockout  
Fast Word Program Time – 20 µs  
Fast Sector Erase Time 200 ms  
Dual Plane Organization, Permitting Concurrent Read while Program/Erase  
Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors  
Memory Plane B: Fourteen 32K Word Sectors  
Erase Suspend Capability  
Supports Reading/Programming Data from Any Sector by Suspending Erase of  
Any Different Sector  
Low-power Operation  
8-megabit  
(512K x 16/1M x 8)  
3-volt Only  
Flash Memory  
25 mA Active  
10 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
Optional VPP Pin for Fast Programming  
RESET Input for Device Initialization  
Sector Program Unlock Command  
TSOP and CBGA Package Options  
AT49BV8011  
AT49BV8011T  
AT49LV8011  
AT49LV8011T  
Top or Bottom Boot Block Configuration Available  
Description  
The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as  
524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data  
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided  
into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball  
CBGA packages. The device has CE, and OE control signals to avoid any bus  
(continued)  
Pin Configurations  
Pin Name  
A0 - A18  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
RDY/BUSY  
READY/BUSY Output  
Optional Power Supply for Faster  
Program/Erase Operations  
VPP  
I/O0 - I/O14  
I/O15 (A-1)  
Data Inputs/Outputs  
I/O15 (Data Input/Output, Word Mode)  
A-1 (LSB Address Input, Byte Mode)  
BYTE  
NC  
Selects Byte or Word Mode  
No Connect  
Rev. 1265E01/00  
VCCQ  
Output Power Supply  

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