Datasheet > AT49BV6416T-85TI

AT49BV6416T-85TI

更新时间： 2024-11-22 03:02:39

品牌	Logo	应用领域
爱特美尔 - ATMEL		光电二极管
页数	文件大小	规格书
38页	312K
描述
Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48

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AT49BV6416T-85TI 数据手册

Features

• 64-megabit (4M x 16) Flash Memory

• 2.7V - 3.6V Read/Write

• High Performance

– Asynchronous Access Time – 70 ns

– Page Mode Read Time – 20 ns

– Synchronous Burst Frequency – 66 MHz

– Configurable Burst Operation

• Sector Erase Architecture

– Eight 4K Word Sectors with Individual Write Lockout

– 32K Word Main Sectors with Individual Write Lockout

• Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms

• 64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not

Being Programmed/Erased

– Memory Plane A: 16M of Memory Including Eight 4K Word Sectors

– Memory Plane B: 16M of Memory Consisting of 32K Word Sectors

– Memory Plane C: 16M of Memory Consisting of 32K Word Sectors

– Memory Plane D: 16M of Memory Consisting of 32K Word Sectors

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming Data from Any Sector by Suspending Erase

of a Different Sector

64-megabit

(4M x 16)

Burst/Page

Mode 2.7-volt

Flash Memory

– Supports Reading Any Word by Suspending Programming of Any Other Word

• Low-power Operation

– 30 mA Active

– 10 µA Standby

AT49BV6416

AT49BV6416T

AT49BN6416

AT49BN6416T

• 1.8V I/O Option Reduces Overall System Power

• Data Polling and Toggle Bit for End of Program Detection

• VPP Pin for Write Protection and Accelerated Program/Erase Operations

• RESET Input for Device Initialization

• TSOP or CBGA Package

• Top or Bottom Boot Block Configuration Available

• 128-bit Protection Register

• Common Flash Interface (CFI)

Advance

Description

Information

The AT49BN/BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is

divided into multiple sectors and planes for erase operations. The devices can be read

or reprogrammed off a single 2.7V power supply, making them ideally suited for in-sys-

tem programming. The output voltage can be separately controlled down to 1.65V

through the VCCQ supply pin. The devices can be configured to operate in the asyn-

chronous/page read (default mode) or burst read mode (not available for the

AT49BV6416(T)). The burst read mode is used to achieve a faster data rate than is

possible in the asynchronous/page read mode.

If the AVD and the CLK signals are both tied to GND, the device will behave like a

standard asynchronous Flash memory. In the page mode, the AVD signal can be tied

to GND or can be pulsed low to latch the page address. In both cases the CLK can be

tied to GND.

Rev. 2481D–FLASH–11/03

12 3 4 5 6 7...38

中文翻译

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与AT49BV6416T-85TI相关器件

型号	品牌	获取价格	描述	数据表
AT49BV6416T-85TU	ATMEL	获取价格	Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV641T-70TI	ATMEL	获取价格	Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
AT49BV642D	ATMEL	获取价格	64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV642D-70TU	ATMEL	获取价格	64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV642DT	ATMEL	获取价格	64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV642DT-70TU	ATMEL	获取价格	64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV8011	ATMEL	获取价格	8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011-12CC	ATMEL	获取价格	8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011-12CI	ATMEL	获取价格	8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011-12TC	ATMEL	获取价格	8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

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