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AT49BV642D-70TU PDF预览

AT49BV642D-70TU

更新时间： 2024-11-21 06:38:23
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管异步传输模式ATM
页数 文件大小 规格书
29页 248K
描述
64-megabit (4M x 16) 3-volt Only Flash Memory

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中文翻译

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AT49BV642D-70TU 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP-48针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.6
最长访问时间：70 ns启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e3长度：18.4 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：16湿度敏感等级：3
功能数量：1部门数/规模：8,127
端子数量：48字数：4194304 words
字数代码：4000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
页面大小：4/8 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：4K,32K
最大待机电流：0.000025 A子类别：Flash Memories
最大压摆率：0.025 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AT49BV642D-70TU 数据手册

 浏览型号AT49BV642D-70TU的Datasheet PDF文件第2页浏览型号AT49BV642D-70TU的Datasheet PDF文件第3页浏览型号AT49BV642D-70TU的Datasheet PDF文件第4页浏览型号AT49BV642D-70TU的Datasheet PDF文件第5页浏览型号AT49BV642D-70TU的Datasheet PDF文件第6页浏览型号AT49BV642D-70TU的Datasheet PDF文件第7页 
Features  
•
•
•
•
Single Voltage Operation Read/Write: 2.65V - 3.6V  
2.7V - 3.6V Read/Write  
Access Time – 70 ns  
Sector Erase Architecture  
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout  
– Eight 4K Word Sectors with Individual Write Lockout  
Fast Word Program Time – 10 µs  
Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming Data from Any Sector by Suspending Erase  
of a Different Sector  
•
•
•
64-megabit  
(4M x 16)  
3-volt Only  
Flash Memory  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
– 10 mA Active  
•
– 15 µA Standby  
•
•
•
•
•
•
•
•
•
Data Polling and Toggle Bit for End of Program Detection  
VPP Pin for Write Protection and Accelerated Program Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
TSOP Package  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
Common Flash Interface (CFI)  
AT49BV642D  
AT49BV642DT  
Green (Pb/Halide-free) Packaging  
1. Description  
The AT49BV642D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304  
words of 16 bits each. The memory is divided into 135 sectors for erase operations.  
The device can be read or reprogrammed off a single 2.7V power supply, making it  
ideally suited for in-system programming.  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors.  
The end of program or erase is detected by Data Polling or toggle bit.  
The VPP pin provides data protection and faster programming times. When the VPP  
input is below 0.4V, the program and erase functions are inhibited. When VPP is at  
1.65V or above, normal program and erase operations can be performed. With VPP at  
10.0V, the program (dual-word program command) operation is accelerated.  
A six-word command (Enter Single Pulse Program Mode) to remove the requirement  
of entering the three-word program sequence is offered to further improve program-  
ming time. After entering the six-word code, only single pulses on the write control  
lines are required for writing into the device. This mode (Single Pulse Word Program)  
is exited by powering down the device, by taking the RESET pin to GND or by a high-  
to-low transition on the VPP input. Erase, Erase Suspend/Resume, Program Sus-  
pend/Resume and Read Reset commands will not work while in this mode; if entered  
they will result in data being programmed into the device. It is not recommended that  
the six-word code reside in the software of the final product but only exist in external  
programming code.  
3631A–FLASH–04/06  
1234567...29

中文翻译

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