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AT49BV6416-85TI PDF预览

AT49BV6416-85TI

更新时间： 2024-11-21 20:10:51
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路闪存
页数 文件大小 规格书
38页 273K
描述
Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48

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中文翻译

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AT49BV6416-85TI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.87
最长访问时间：85 ns启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：16湿度敏感等级：3
功能数量：1部门数/规模：8,127
端子数量：48字数：4194304 words
字数代码：4000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
页面大小：4 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：240电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：4K,32K
最大待机电流：0.00001 A子类别：Flash Memories
最大压摆率：0.05 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AT49BV6416-85TI 数据手册

 浏览型号AT49BV6416-85TI的Datasheet PDF文件第2页浏览型号AT49BV6416-85TI的Datasheet PDF文件第3页浏览型号AT49BV6416-85TI的Datasheet PDF文件第4页浏览型号AT49BV6416-85TI的Datasheet PDF文件第5页浏览型号AT49BV6416-85TI的Datasheet PDF文件第6页浏览型号AT49BV6416-85TI的Datasheet PDF文件第7页 
Features  
• 64-megabit (4M x 16) Flash Memory  
• 2.7V - 3.6V Read/Write  
• High Performance  
– Asynchronous Access Time – 70 ns  
– Page Mode Read Time – 20 ns  
– Synchronous Burst Frequency – 66 MHz  
– Configurable Burst Operation  
• Sector Erase Architecture  
– Eight 4K Word Sectors with Individual Write Lockout  
– 32K Word Main Sectors with Individual Write Lockout  
• Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms  
• 64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not  
Being Programmed/Erased  
– Memory Plane A: 16M of Memory Including Eight 4K Word Sectors  
– Memory Plane B: 16M of Memory Consisting of 32K Word Sectors  
– Memory Plane C: 16M of Memory Consisting of 32K Word Sectors  
– Memory Plane D: 16M of Memory Consisting of 32K Word Sectors  
• Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming Data from Any Sector by Suspending Erase  
of a Different Sector  
64-megabit  
(4M x 16)  
Burst/Page  
Mode 2.7-volt  
Flash Memory  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
• Low-power Operation  
– 30 mA Active  
– 10 µA Standby  
AT49BV6416  
AT49BV6416T  
AT49BN6416  
AT49BN6416T  
• 1.8V I/O Option Reduces Overall System Power  
• Data Polling and Toggle Bit for End of Program Detection  
• VPP Pin for Write Protection and Accelerated Program/Erase Operations  
• RESET Input for Device Initialization  
• TSOP or CBGA Package  
• Top or Bottom Boot Block Configuration Available  
• 128-bit Protection Register  
• Common Flash Interface (CFI)  
Advance  
Description  
Information  
The AT49BN/BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is  
divided into multiple sectors and planes for erase operations. The devices can be read  
or reprogrammed off a single 2.7V power supply, making them ideally suited for in-sys-  
tem programming. The output voltage can be separately controlled down to 1.65V  
through the VCCQ supply pin. The devices can be configured to operate in the asyn-  
chronous/page read (default mode) or burst read mode (not available for the  
AT49BV6416(T)). The burst read mode is used to achieve a faster data rate than is  
possible in the asynchronous/page read mode.  
If the AVD and the CLK signals are both tied to GND, the device will behave like a  
standard asynchronous Flash memory. In the page mode, the AVD signal can be tied  
to GND or can be pulsed low to latch the page address. In both cases the CLK can be  
tied to GND.  
Rev. 2481C–FLASH–5/03  
1234567...38

中文翻译

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与AT49BV6416-85TI相关器件

型号 品牌 获取价格 描述 数据表
AT49BV6416-85TU ATMEL

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 		Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV6416C ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416C-70CI ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416CT ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416CT-70CI ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416CT-70CL ATMEL

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 		暂无描述
AT49BV6416T ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416T-70CI ATMEL

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 		Flash, 4MX16, 70ns, CBGA55, 8 X 11 MM, 1 MM HEIGHT, 0.75 MM PITCH, CERAMIC, BGA-55
AT49BV6416T-70TI ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416T-70TU ATMEL

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 		Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48

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