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AT49BV6416T PDF预览

AT49BV6416T

更新时间： 2024-11-20 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
30页 293K
描述
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory

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中文翻译

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AT49BV6416T 数据手册

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Features  
• 64-megabit (4M x 16) Flash Memory  
• 2.7V - 3.6V Read/Write  
• High Performance  
– Asynchronous Access Time – 70 ns  
– Page Mode Read Time – 20 ns  
• Sector Erase Architecture  
– Eight 4K Word Sectors with Individual Write Lockout  
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout  
• Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms  
• Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being  
Programmed/Erased  
– Memory Plane A: 16M of Memory Including Eight 4K Word Sectors  
– Memory Plane B: 16M of Memory Consisting of 32K Word Sectors  
– Memory Plane C: 16M of Memory Consisting of 32K Word Sectors  
– Memory Plane D: 16M of Memory Consisting of 32K Word Sectors  
• Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming Data from Any Sector by Suspending Erase  
of a Different Sector  
64-megabit  
(4M x 16)  
Page Mode  
2.7-volt Flash  
Memory  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
• Low-power Operation  
– 30 mA Active  
– 35 µA Standby  
AT49BV6416  
• 2.2V I/O Option Reduces Overall System Power  
• Data Polling and Toggle Bit for End of Program Detection  
• VPP Pin for Write Protection and Accelerated Program Operations  
• RESET Input for Device Initialization  
AT49BV6416T  
• TSOP Package  
• Top or Bottom Boot Block Configuration Available  
• 128-bit Protection Register  
• Common Flash Interface (CFI)  
• Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT49BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided  
into multiple sectors and planes for erase operations. The device can be read or  
reprogrammed off a single 2.7V power supply, making it ideally suited for in-system  
programming. The output voltage can be separately controlled down to 2.2V through  
the VCCQ supply pin. The device can operate in the asynchronous or page read  
mode.  
The AT49BV6416(T) is divided into four memory planes. A read operation can occur  
in any of the three planes which is not being programmed or erased. This concurrent  
operation allows improved system performance by not requiring the system to wait for  
a program or erase operation to complete before a read is performed. To further  
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-  
pend feature. This feature will put the erase or program on hold for any amount of time  
and let the user read data from or program data to any of the remaining sectors. There  
is no reason to suspend the erase or program operation if the data to be read is in  
another memory plane. The end of program or erase is detected by Data Polling or  
toggle bit.  
3451C–FLASH–2/05  
1234567...30

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AT49BV6416T-70TI ATMEL

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 		64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416T-70TU ATMEL

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 		Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV6416T-85TI ATMEL

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 		Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
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 		Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
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 		Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
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 		64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV642D-70TU ATMEL

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AT49BV642DT ATMEL

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 		64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV642DT-70TU ATMEL

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 		64-megabit (4M x 16) 3-volt Only Flash Memory

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