Datasheet > AT49BV640DT

AT49BV640DT

更新时间： 2024-11-27 06:38:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
31页	560K
描述
64-megabit (4M x 16) 3-volt Only Flash Memory

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中文翻译

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AT49BV640DT 数据手册

Features

•

Single Voltage Operation Read/Write: 2.65V - 3.6V

Access Time – 70 ns

Sector Erase Architecture

– One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with

Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Fast Word Program Time – 10 µs

•

Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 100 ms

Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming Data from Any Sector by Suspending

Erase of a Different Sector

64-megabit

(4M x 16)

3-volt Only

Flash Memory

– Supports Reading Any Word by Suspending Programming of Any Other Word

Low-power Operation

•

– 10 mA Active

– 15 µA Standby

•

VPP Pin for Write Protection and Accelerated Program Operation

WP Pin for Sector Protection

AT49BV640D

AT49BV640DT

RESET Input for Device Initialization

Flexible Sector Protection

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

Minimum 100,000 Erase Cycles

Common Flash Interface (CFI)

Green (Pb/Halide-free/RoHS Compliant) Packaging

1. Description

The AT49BV640D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304

words of 16 bits each. The memory is divided into 135 sectors for erase operations.

The device is offered in a 48-ball CBGA package. The device has CE and OE control

signals to avoid any bus contention. This device can be read or reprogrammed using

a single power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place

the device in other operation modes such as program and erase. The device has

the capability to protect the data in any sector (see “Flexible Sector Protection” on

page 6).

To increase the flexibility of the device, it contains an Erase Suspend and Program

Suspend feature. This feature will put the erase or program on hold for any amount of

time and let the user read data from or program data to any of the remaining sectors

within the memory.

The VPP pin provides data protection. When the V_PPinput is below 0.4V, the program

and erase functions are inhibited. When V_PPis at 1.65V or above, normal program

and erase operations can be performed. With V_PPat 10.0V, the program (Dual-word

Program command) operation is accelerated.

3608C–FLASH–11/06

12 3 4 5 6 7...31

中文翻译

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与AT49BV640DT相关器件

型号	品牌	获取价格	描述	数据表
AT49BV640DT-70CU	ATMEL	获取价格	64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV640S	ATMEL	获取价格	64-megabi (4M*16) Secure 3-volt only Memory
AT49BV640ST	ATMEL	获取价格	64-megabi (4M*16) Secure 3-volt only Memory
AT49BV640T-70CI	ATMEL	获取价格	Flash, 4MX16, 70ns, PBGA48, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, CBGA-48
AT49BV640T-70CJ	ATMEL	获取价格	Flash, 4MX16, 70ns, PBGA48, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, CBGA-48
AT49BV640T-70TI	ATMEL	获取价格	Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV640T-70TJ	ATMEL	获取价格	Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV640T-85CI	ATMEL	获取价格	Flash, 4MX16, 85ns, PBGA48, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, CBGA-48
AT49BV640T-85CJ	ATMEL	获取价格	Flash, 4MX16, 85ns, PBGA48, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, CBGA-48
AT49BV640T-85TI	ATMEL	获取价格	Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48

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