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AT49BV1024A-70VJ PDF预览

AT49BV1024A-70VJ

更新时间： 2024-09-20 15:28:07
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
14页 405K
描述
Flash, 64KX16, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP1-40

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中文翻译

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AT49BV1024A-70VJ 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：10 X 14 MM, PLASTIC, TSOP1-40
针数：40Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.84最长访问时间：70 ns
JESD-30 代码：R-PDSO-G40JESD-609代码：e3
长度：12.4 mm内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：40字数：65536 words
字数代码：64000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：64KX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：10 mmBase Number Matches：1

AT49BV1024A-70VJ 数据手册

 浏览型号AT49BV1024A-70VJ的Datasheet PDF文件第2页浏览型号AT49BV1024A-70VJ的Datasheet PDF文件第3页浏览型号AT49BV1024A-70VJ的Datasheet PDF文件第4页浏览型号AT49BV1024A-70VJ的Datasheet PDF文件第5页浏览型号AT49BV1024A-70VJ的Datasheet PDF文件第6页浏览型号AT49BV1024A-70VJ的Datasheet PDF文件第7页 
Features  
• Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV)  
• Fast Read Access Time – 45 ns  
• Internal Program Control and Timer  
• 8K Word Boot Block with Lockout  
• Fast Erase Cycle Time – 1.5 Seconds  
• Word-by-word Programming – 20 µs/Word Typical  
• Hardware Data Protection  
• Data Polling for End of Program Detection  
• Small 10 x 14 mm VSOP Package  
• Typical 10,000 Write Cycles  
1-megabit  
(64K x 16)  
3-volt Only  
Flash Memory  
Description  
The AT49BV/LV1024A is a 3-volt only in-system Flash memory. The 1-megabit of  
memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s  
advanced nonvolatile CMOS technology, the devices offer access times to 45 ns with  
power dissipation of just 72 mW over the industrial temperature range.  
To allow for simple in-system reprogrammability, the AT49BV/LV1024A does not  
require high input voltages for programming. Three-volt-only commands determine the  
read and programming operation of the device. Reading data out of the device is simi-  
lar to reading from an EPROM. Reprogramming the AT49BV/LV1024A is performed  
by erasing a block of data (entire chip or main memory block) and then programming  
on a word by word basis. The typical word programming time is a fast 20 µs. The end  
of a program cycle can be optionally detected by the Data Polling feature. Once the  
end of a word program cycle has been detected, a new access for a read or program  
can begin. The typical number of program and erase cycles is in excess of 10,000  
cycles.  
AT49BV1024A  
AT49LV1024A  
The optional 8K word boot block section includes a reprogramming write lock out fea-  
ture to provide data integrity. The boot sector is designed to contain user secure code,  
and when the feature is enabled, the boot sector is permanently protected from being  
erased or reprogrammed.  
AT49BV/LV1024A VSOP Top View  
Pin Configurations  
Type 1  
Pin Name  
A0 - A15  
CE  
Function  
10 x 14 mm  
Addresses  
A9  
A10  
1
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
GND  
A8  
2
Chip Enable  
Output Enable  
Write Enable  
A11  
3
A7  
A12  
4
A6  
OE  
A13  
5
A5  
A14  
6
A4  
WE  
A15  
7
A3  
NC  
8
A2  
WE  
9
A1  
I/O0 - I/O15 Data Inputs/Outputs  
NC No Connect  
VCC  
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
A0  
OE  
CE  
I/O0  
I/O1  
I/O2  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
GND  
I/O15  
I/O14  
I/O13  
I/O12  
I/O11  
I/O10  
I/O9  
I/O8  
Rev. 3332A–FLASH–01/03  
1234567...14

中文翻译

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