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AT49BV1604A-90CI PDF预览

AT49BV1604A-90CI

更新时间: 2024-10-31 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
26页 389K
描述
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory

AT49BV1604A-90CI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA45,6X8,30
针数:45Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.87最长访问时间:90 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PBGA-B45长度:7.5 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:1
功能数量:1部门数/规模:8,31
端子数量:45字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA45,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:4K,32K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.045 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.65 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:6.5 mm

AT49BV1604A-90CI 数据手册

 浏览型号AT49BV1604A-90CI的Datasheet PDF文件第2页浏览型号AT49BV1604A-90CI的Datasheet PDF文件第3页浏览型号AT49BV1604A-90CI的Datasheet PDF文件第4页浏览型号AT49BV1604A-90CI的Datasheet PDF文件第5页浏览型号AT49BV1604A-90CI的Datasheet PDF文件第6页浏览型号AT49BV1604A-90CI的Datasheet PDF文件第7页 
Features  
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)  
Access Time – 70 ns  
Sector Erase Architecture  
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
Fast Word Program Time – 20 µs  
Fast Sector Erase Time – 300 ms  
Dual-plane Organization, Permitting Concurrent Read while Program/Erase  
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors  
Memory Plane B: Twenty-four 32K Word Sectors  
Erase Suspend Capability  
– Supports Reading/Programming Data from Any Sector by Suspending Erase of  
Any Different Sector  
Low-power Operation  
16-megabit  
(1M x 16/2M x 8)  
3-volt Only  
– 30 mA Active  
– 10 µA Standby  
Flash Memory  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
AT49BV1604A  
AT49BV1604AT  
AT49BV1614A  
AT49LV1614A  
AT49BV1614AT  
AT49LV1614AT  
TSOP and CBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
Description  
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized  
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data  
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided  
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and  
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus  
contention. This device can be read or reprogrammed using a single 2.65V power  
supply, making it ideally suited for in-system programming.  
Pin Configurations  
Pin Name  
A0 - A19  
CE  
Function  
Addresses  
Chip Enable  
OE  
Output Enable  
WE  
Write Enable  
RESET  
RDY/BUSY  
VPP  
Reset  
READY/BUSY Output  
Power Supply for Accelerated Program/Erase Operations  
Data Inputs/Outputs  
I/O0 - I/O14  
I/O15 (A-1)  
BYTE  
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)  
Selects Byte or Word Mode  
NC  
No Connect  
VCCQ  
Output Power Supply  
Rev. 1411F–FLASH–03/02  

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