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AT49BV160C PDF预览

AT49BV160C

更新时间: 2024-10-30 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
30页 233K
描述
16-megabit (1M x 16) 3-volt Only Flash Memory

AT49BV160C 数据手册

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Features  
Single Voltage Read/Write Operation: 2.65V to 3.6V  
Access Time – 70 ns  
Sector Erase Architecture  
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
Fast Word Program Time – 12 µs  
Fast Sector Erase Time – 300 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
16-megabit  
(1M x 16)  
3-volt Only  
Flash Memory  
– 12 mA Active  
– 13 µA Standby  
VPP Pin for Write Protection  
WP Pin for Sector Protection  
RESET Input for Device Initialization  
Flexible Sector Protection  
TSOP and CBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
Minimum 100,000 Erase Cycles  
Common Flash Interface (CFI)  
AT49BV160C  
AT49BV160CT  
Description  
The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576  
words of 16 bits each. The memory is divided into 39 sectors for erase operations.  
The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has  
CE and OE control signals to avoid any bus contention. This device can be read or  
reprogrammed using a single power supply, making it ideally suited for in-system  
programming.  
Pin Configurations  
Pin Name  
A0 - A19  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
VPP  
Write Protection  
Data Inputs/Outputs  
No Connect  
I/O0 - I/O15  
NC  
VCCQ  
WP  
Output Power Supply  
Write Protect  
3367D–FLASH–5/04  

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