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AT49BV160DT-70CU PDF预览

AT49BV160DT-70CU

更新时间: 2024-10-01 13:05:43
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
29页 435K
描述
Flash, 1MX16, 70ns, PBGA46, 6.50 X 7.50 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, CBGA-46

AT49BV160DT-70CU 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:6.50 X 7.50 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, CBGA-46
针数:46Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.33Is Samacsys:N
最长访问时间:70 ns启动块:BOTTOM/TOP
JESD-30 代码:R-PBGA-B46JESD-609代码:e1
长度:7.5 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:46
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.65 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:6.5 mm
Base Number Matches:1

AT49BV160DT-70CU 数据手册

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Features  
Single Voltage Read/Write Operation: 2.65V to 3.6V  
Access Time – 70 ns  
Sector Erase Architecture  
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
Fast Word Program Time – 10 µs  
Fast Sector Erase Time – 100 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
16-megabit  
(1M x 16)  
3-volt Only  
Flash Memory  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
– 10 mA Active  
– 15 µA Standby  
VPP Pin for Write Protection and Accelerated Program Operation  
WP Pin for Sector Protection  
RESET Input for Device Initialization  
Flexible Sector Protection  
TSOP Package  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT49BV160D  
AT49BV160DT  
Minimum 100,000 Erase Cycles  
Common Flash Interface (CFI)  
Green (Pb/Halide-free) Packaging  
1. Description  
The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576  
words of 16 bits each. The memory is divided into 39 sectors for erase operations.  
The device is offered in a 48-lead TSOP package. The device has CE and OE control  
signals to avoid any bus contention. This device can be read or reprogrammed using  
a single power supply, making it ideally suited for in-system programming.  
The device powers on in the read mode. Command sequences are used to place  
the device in other operation modes such as program and erase. The device has  
the capability to protect the data in any sector (see “Flexible Sector Protection” on  
page 6).  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors  
within the memory.  
The VPP pin provides data protection. When the VPP input is below 0.4V, the program  
and erase functions are inhibited. When VPP is at 1.65V or above, normal program  
and erase operations can be performed. With VPP at 10.0V, the program (Dual-word  
Program Command) operation is accelerated.  
3591C–FLASH–6/06  

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