Datasheet > AT49BV1614-11CI

AT49BV1614-11CI

更新时间： 2024-09-30 23:32:47

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路异步传输模式 ATM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	334K
描述
x8/x16 Flash EEPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT49BV1614-11CI 数据手册

Features

• 2.7V to 3.3V Read/Write

• Access Time – 90 ns

• Sector Erase Architecture

– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

– Two 16K Word (32K Byte) Sectors with Individual Write Lockout

• Fast Word Program Time – 20 µs

• Fast Sector Erase Time – 200 ms

• Dual-plane Organization, Permitting Concurrent Read while Program/Erase

Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors

Memory Plane B: Twenty-four 32K Word Sectors

• Erase Suspend Capability

– Supports Reading/Programming Data from Any Sector by Suspending Erase of

Any Different Sector

• Low-power Operation

16-megabit

(1M x 16/2M x 8)

3-volt Only

– 25 mA Active

– 10 µA Standby

Flash Memory

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• Optional VPP Pin for Fast Programming

• RESET Input for Device Initialization

AT49BV1604

AT49BV1604T

AT49BV1614

AT49BV1614T

• Sector Program Unlock Command

• TSOP, CBGA and µBGA Package Options

• Top or Bottom Boot Block Configuration Available

Description

The AT49BV16X4(T) is a 2.7- to 3.3-volt 16-megabit Flash memory organized as

1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data

appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided

into 40 sectors for erase operations. The device is offered in 48-lead TSOP and

48-ball µBGA packages. The device has CE and OE control signals to avoid any bus

Recommend Using

AT49BV160(T)/161(T)

for New Designs

(continued)

Pin Configurations

Pin Name

A0 - A19

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

RESET

RDY/BUSY

READY/BUSY Output

Optional Power Supply for Faster

Program/Erase Operations

VPP

I/O0 - I/O14

I/O15 (A-1)

Data Inputs/Outputs

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

No Connect

VCCQ

Output Power Supply

Don’t Connect

Rev. 0925K–09/00

12 3 4 5 6 7...18

中文翻译

下载PDF

与AT49BV1614-11CI相关器件

型号	品牌	获取价格	描述	数据表
AT49BV1614-11TI	ETC	获取价格	x8/x16 Flash EEPROM
AT49BV1614-12CC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-12CI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-12TC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-12TI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-90CC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-90CI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-90TC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614-90TI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614A	ATMEL	获取价格	16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory

与AT49BV1614-11CI相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

31
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

28
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV1614-11CI

AT49BV1614-11CI 数据手册

与AT49BV1614-11CI相关器件

与AT49BV1614-11CI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV1614-11CI

AT49BV1614-11CI 数据手册

与AT49BV1614-11CI相关器件

与AT49BV1614-11CI相关文章

您还可以找

您在本页遇到什么问题？