Datasheet > AT49BV160-11CI

AT49BV160-11CI

更新时间： 2024-09-19 23:32:43

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
24页	407K
描述
x8/x16 Flash EEPROM

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中文翻译

获取价格

数据手册

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AT49BV160-11CI 数据手册

Features

• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)

• Access Time – 70 ns

• Sector Erase Architecture

– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

• Fast Word Program Time – 20 µs

• Fast Sector Erase Time – 200 ms

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase of a

Different Sector

– Supports Reading Any Byte/Word by Suspending Programming of Any Other

Byte/Word

• Low-power Operation

16-megabit

(1M x 16/2M x 8)

3-volt Only

– 25 mA Active

– 10 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• VPP Pin for Write Protection and Accelerated Program/Erase Operations

• RESET Input for Device Initialization

Flash Memory

• Sector Lockdown Support

• TSOP and CBGA Package Options

• Top or Bottom Boot Block Configuration Available

• 128-bit Protection Register

AT49BV160

AT49BV160T

AT49BV161

AT49BV161T

AT49LV160

AT49LV160T

AT49LV161

AT49LV161T

Description

The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as

1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data

appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided

into 39 sectors for erase operations. The device is offered in 48-lead TSOP and

48-ball CBGA packages. The device has CE and OE control signals to avoid any bus

contention. This device can be read or reprogrammed using a single 2.65V power

supply, making it ideally suited for in-system programming.

Pin Configurations

Pin Name

A0 - A19

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

RESET

RDY/BUSY

READY/BUSY Output

Write Protection and Power Supply for

Accelerated Program/Erase Operations

VPP

I/O0 - I/O14

I/O15 (A-1)

Data Inputs/Outputs

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

No Connect

Rev. 1427H–06/01

VCCQ

Output Power Supply

12 3 4 5 6 7...24

中文翻译

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与AT49BV160-11CI相关器件

型号	品牌	获取价格	描述	数据表
AT49BV160-11TI	ETC	获取价格	x8/x16 Flash EEPROM
AT49BV1604	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-11UI	ATMEL	获取价格	16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
AT49BV1604-12TC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-12TI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-12UC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-12UI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-90TC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-90TI	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604-90UC	ATMEL	获取价格	16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory

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