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AT42085 PDF预览

AT42085

更新时间: 2024-09-14 23:16:19
品牌 Logo 应用领域
安捷伦 - AGILENT /
页数 文件大小 规格书
5页 54K
描述
Up to 6 GHz Medium Power Up to 6 GHz Medium Power

AT42085 数据手册

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Up to 6 GHz Medium Power  
Silicon Bipolar Transistor  
Technical Data  
AT-42085  
The 20 emitter finger interdigi-  
Features  
85 Plastic Package  
tated geometry yields a medium  
sized transistor with impedances  
that are easy to match for low  
noise and medium power applica-  
tions. Applications include use in  
wireless systems as an LNA, gain  
stage, buffer, oscillator, and  
mixer. An optimum noise match  
near 50 up to 1 GHz, makes this  
device easy to use as a low noise  
amplifier.  
• High Output Power:  
20.5dBmTypicalP1dB at2.0 GHz  
• High Gain at 1 dB  
Compression:  
14.0dBTypicalG1dBat2.0 GHz  
• Low Noise Figure:  
2.0dBTypicalNFOat2.0 GHz  
• High Gain-Bandwidth  
Product: 8.0 GHz Typical f  
T
• Low Cost Plastic Package  
The AT-42085 bipolar transistor is  
fabricated using Hewlett-Packard’s  
10 GHz fT Self-Aligned-Transistor  
(SAT) process. The die is nitride  
passivated for surface protection.  
Excellent device uniformity,  
performance and reliability are  
produced by the use of ion-  
implantation, self-alignment  
Description  
Hewlett-Packard’s AT-42085 is a  
general purpose NPN bipolar  
transistor that offers excellent  
high frequency performance. The  
AT-42085 is housed in a low cost  
.085" diameter plastic package.  
The 4 micron emitter-to-emitter  
pitch enables this transistor to be  
used in many different functions.  
techniques, and gold metalization  
in the fabrication of this device.  
5965-8913E  
4-169  

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