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AT-42086 PDF预览

AT-42086

更新时间: 2024-09-14 22:36:23
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体晶体管
页数 文件大小 规格书
5页 56K
描述
Up to 6 GHz Medium Power Silicon Bipolar Transistor

AT-42086 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.58
最大集电极电流 (IC):0.08 A配置:Single
最小直流电流增益 (hFE):30最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

AT-42086 数据手册

 浏览型号AT-42086的Datasheet PDF文件第2页浏览型号AT-42086的Datasheet PDF文件第3页浏览型号AT-42086的Datasheet PDF文件第4页浏览型号AT-42086的Datasheet PDF文件第5页 
Up to 6 GHz Medium Power  
Silicon Bipolar Transistor  
Technical Data  
AT-42086  
plastic package. The 4 micron  
Features  
86 Plastic Package  
emitter-to-emitter pitch enables  
this transistor to be used in many  
different functions. The 20 emitter  
finger interdigitated geometry  
yields a medium sized transistor  
with impedances that are easy to  
match for low noise and medium  
power applications. Applications  
include use in wireless systems as  
an LNA, gain stage, buffer, oscilla-  
tor, and mixer. An optimum noise  
match near 50 up to 1 GHz,  
makes this device easy to use as a  
low noise amplifier.  
• High Output Power:  
20.5dBmTypicalP1dB at2.0 GHz  
• High Gain at 1 dB  
Compression:  
13.5dBTypicalG1dBat2.0 GHz  
• Low Noise Figure:  
1.9dBTypicalNFOat2.0 GHz  
PinConnections  
• High Gain-Bandwidth  
EMITTER  
Product: 8.0 GHz Typical f  
T
4
• Surface Mount Plastic  
Package  
• Tape-and-Reel Packaging  
Option Available[1]  
BASE  
COLLECTOR  
1
3
The AT-42086 bipolar transistor is  
fabricated using Hewlett- Packard’s  
10 GHz fT Self-Aligned-Transistor  
(SAT) process. The die is nitride  
passivated for surface protection.  
Excellent device uniformity,  
Description  
2
Hewlett-Packard’s AT-42086 is a  
general purpose NPN bipolar  
transistor that offers excellent  
high frequency performance. The  
AT-42086 is housed in a low cost  
surface mount .085" diameter  
EMITTER  
performance and reliability are  
produced by the use of ion-  
implantation, self-alignment  
techniques, and gold metalization  
in the fabrication of this device.  
Note:  
1. Refer to PACKAGING section “Tape-  
and-Reel Packaging for Semiconductor  
Devices.”  
5965-8914E  
4-174  

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